FSB649
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- Mfr.Part #
- FSB649
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 25V 3A SOT23-3
- Stock
- 4,209
- In Stock ：
- 4,209
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- JESD-609 Code :
- e3
- Terminal Form :
- Gull wing
- Transistor Type :
- NPN
- Terminal Position :
- Dual
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Breakdown Voltage :
- 25V
- Radiation Hardening :
- No
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Polarity/Channel Type :
- NPN
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 1A 2V
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 300mA, 3A
- Frequency - Transition :
- 150MHz
- ECCN Code :
- EAR99
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Max Breakdown Voltage :
- 25V
- Packaging :
- Tape and Reel (TR)
- Power Dissipation :
- 500mW
- Voltage - Rated DC :
- 25V
- Collector Base Voltage (VCBO) :
- 35V
- Transition Frequency :
- 150MHz
- Number of Terminations :
- 3
- Current Rating :
- 3A
- Operating Temperature :
- -55°C~150°C TJ
- Mounting Type :
- Surface Mount
- Emitter Base Voltage (VEBO) :
- 5V
- Transistor Element Material :
- SILICON
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Mount :
- Surface Mount
- Number of Elements :
- 1
- hFE Min :
- 100
- Number of Pins :
- 3
- Pbfree Code :
- yes
- Published :
- 2008
- Terminal Finish :
- Tin (Sn)
- Max Collector Current :
- 3A
- Weight :
- 30mg
- Max Power Dissipation :
- 500mW
- Collector Emitter Voltage (VCEO) :
- 25V
- Collector Emitter Saturation Voltage :
- 600mV
- Element Configuration :
- Single
- Base Part Number :
- FSB649
- Factory Lead Time :
- 20 Weeks
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lead Free :
- Lead Free
- Datasheets
- FSB649
NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
FSB649 Overview
In this device, the DC current gain is 100 @ 1A 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 600mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 600mV @ 300mA, 3A.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 3A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 150MHz.Input voltage breakdown is available at 25V volts.Single BJT transistor is possible for the collector current to fall as low as 3A volts at Single BJT transistors maximum.
FSB649 Features
the DC current gain for this device is 100 @ 1A 2V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 300mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is 3A
a transition frequency of 150MHz
FSB649 Applications
There are a lot of ON Semiconductor
FSB649 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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