FSB649
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- Mfr.Part #
- FSB649
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 25V 3A SOT23-3
- Stock
- 4,209
- In Stock ：
- 4,209
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Collector Current :
- 3A
- Factory Lead Time :
- 20 Weeks
- Radiation Hardening :
- No
- Pbfree Code :
- yes
- Number of Terminations :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 300mA, 3A
- Terminal Form :
- Gull wing
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Published :
- 2008
- Element Configuration :
- Single
- Max Power Dissipation :
- 500mW
- Power Dissipation :
- 500mW
- Collector Emitter Voltage (VCEO) :
- 25V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Weight :
- 30mg
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Transition Frequency :
- 150MHz
- Voltage - Rated DC :
- 25V
- Mounting Type :
- Surface Mount
- Current Rating :
- 3A
- Lead Free :
- Lead Free
- Collector Base Voltage (VCBO) :
- 35V
- Frequency - Transition :
- 150MHz
- Packaging :
- Tape and Reel (TR)
- Collector Emitter Saturation Voltage :
- 600mV
- JESD-609 Code :
- e3
- Emitter Base Voltage (VEBO) :
- 5V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 1A 2V
- RoHS Status :
- ROHS3 Compliant
- Transistor Element Material :
- SILICON
- Terminal Finish :
- Tin (Sn)
- Base Part Number :
- FSB649
- Max Breakdown Voltage :
- 25V
- Number of Pins :
- 3
- Collector Emitter Breakdown Voltage :
- 25V
- Number of Elements :
- 1
- ECCN Code :
- EAR99
- Polarity/Channel Type :
- NPN
- Transistor Type :
- NPN
- Terminal Position :
- Dual
- Mount :
- Surface Mount
- Operating Temperature :
- -55°C~150°C TJ
- hFE Min :
- 100
- Datasheets
- FSB649
NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
FSB649 Overview
In this device, the DC current gain is 100 @ 1A 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 600mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 600mV @ 300mA, 3A.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 3A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 150MHz.Input voltage breakdown is available at 25V volts.Single BJT transistor is possible for the collector current to fall as low as 3A volts at Single BJT transistors maximum.
FSB649 Features
the DC current gain for this device is 100 @ 1A 2V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 300mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is 3A
a transition frequency of 150MHz
FSB649 Applications
There are a lot of ON Semiconductor
FSB649 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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