FSB619
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- Mfr.Part #
- FSB619
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 50V 2A SOT23-3
- Stock
- 11,013
- In Stock ：
- 11,013
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Form :
- Gull wing
- Gain Bandwidth Product :
- 100MHz
- Number of Pins :
- 3
- Emitter Base Voltage (VEBO) :
- 5V
- Collector Emitter Voltage (VCEO) :
- 50V
- Collector Emitter Breakdown Voltage :
- 50V
- Transition Frequency :
- 100MHz
- Number of Terminations :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Width :
- 1.4mm
- Packaging :
- Tape and Reel (TR)
- Lead Free :
- Lead Free
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 1A 2V
- Pbfree Code :
- yes
- Max Power Dissipation :
- 500mW
- Max Breakdown Voltage :
- 25V
- Polarity/Channel Type :
- NPN
- Voltage - Rated DC :
- 50V
- JESD-609 Code :
- e3
- Base Part Number :
- FSB619
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Element Configuration :
- Single
- Terminal Position :
- Dual
- Collector Base Voltage (VCBO) :
- 50V
- Factory Lead Time :
- 6 Weeks
- Current Rating :
- 2A
- Current - Collector Cutoff (Max) :
- 100nA
- Max Collector Current :
- 2A
- Height :
- 940μm
- Vce Saturation (Max) @ Ib, Ic :
- 320mV @ 50mA, 2A
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 day ago)
- Weight :
- 30mg
- Number of Elements :
- 1
- Mount :
- Surface Mount
- ECCN Code :
- EAR99
- hFE Min :
- 300
- Length :
- 2.92mm
- Transistor Type :
- NPN
- Operating Temperature :
- -55°C~150°C TJ
- Radiation Hardening :
- No
- Frequency :
- 100MHz
- Contact Plating :
- Tin
- RoHS Status :
- ROHS3 Compliant
- Transistor Element Material :
- SILICON
- Transistor Application :
- AMPLIFIER
- Collector Emitter Saturation Voltage :
- 320mV
- Published :
- 2008
- Mounting Type :
- Surface Mount
- Power Dissipation :
- 500mW
- Datasheets
- FSB619
NPN -55°C~150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
FSB619 Overview
This device has a DC current gain of 200 @ 1A 2V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 320mV.A VCE saturation (Max) of 320mV @ 50mA, 2A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of 2A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 100MHz.A breakdown input voltage of 25V volts can be used.A maximum collector current of 2A volts is possible.
FSB619 Features
the DC current gain for this device is 200 @ 1A 2V
a collector emitter saturation voltage of 320mV
the vce saturation(Max) is 320mV @ 50mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is 2A
a transition frequency of 100MHz
FSB619 Applications
There are a lot of ON Semiconductor
FSB619 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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