FSB619
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- Mfr.Part #
- FSB619
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 50V 2A SOT23-3
- Stock
- 11,013
- In Stock ：
- 11,013
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Polarity/Channel Type :
- NPN
- Collector Emitter Breakdown Voltage :
- 50V
- hFE Min :
- 300
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Surface Mount
- Number of Elements :
- 1
- Voltage - Rated DC :
- 50V
- Collector Emitter Saturation Voltage :
- 320mV
- Collector Emitter Voltage (VCEO) :
- 50V
- JESD-609 Code :
- e3
- Terminal Position :
- Dual
- Radiation Hardening :
- No
- Current - Collector Cutoff (Max) :
- 100nA
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 day ago)
- Length :
- 2.92mm
- Operating Temperature :
- -55°C~150°C TJ
- Power Dissipation :
- 500mW
- Number of Terminations :
- 3
- Number of Pins :
- 3
- Max Breakdown Voltage :
- 25V
- Factory Lead Time :
- 6 Weeks
- Max Collector Current :
- 2A
- Terminal Form :
- Gull wing
- Lead Free :
- Lead Free
- Transition Frequency :
- 100MHz
- ECCN Code :
- EAR99
- Emitter Base Voltage (VEBO) :
- 5V
- Weight :
- 30mg
- Height :
- 940μm
- Vce Saturation (Max) @ Ib, Ic :
- 320mV @ 50mA, 2A
- Element Configuration :
- Single
- Base Part Number :
- FSB619
- Collector Base Voltage (VCBO) :
- 50V
- Max Power Dissipation :
- 500mW
- Transistor Type :
- NPN
- Contact Plating :
- Tin
- Frequency :
- 100MHz
- Width :
- 1.4mm
- Packaging :
- Tape and Reel (TR)
- Mount :
- Surface Mount
- Current Rating :
- 2A
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 1A 2V
- Published :
- 2008
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pbfree Code :
- yes
- Transistor Application :
- AMPLIFIER
- Transistor Element Material :
- SILICON
- Gain Bandwidth Product :
- 100MHz
- Datasheets
- FSB619
NPN -55°C~150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
FSB619 Overview
This device has a DC current gain of 200 @ 1A 2V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 320mV.A VCE saturation (Max) of 320mV @ 50mA, 2A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of 2A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 100MHz.A breakdown input voltage of 25V volts can be used.A maximum collector current of 2A volts is possible.
FSB619 Features
the DC current gain for this device is 200 @ 1A 2V
a collector emitter saturation voltage of 320mV
the vce saturation(Max) is 320mV @ 50mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is 2A
a transition frequency of 100MHz
FSB619 Applications
There are a lot of ON Semiconductor
FSB619 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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