FSB660A
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- Mfr.Part #
- FSB660A
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 60V 2A SOT23-3
- Stock
- 32,009
- In Stock ：
- 32,009
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Elements :
- 1
- Emitter Base Voltage (VEBO) :
- -5V
- Collector Emitter Voltage (VCEO) :
- 60V
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Packaging :
- Tape and Reel (TR)
- Pbfree Code :
- yes
- Terminal Position :
- Dual
- Transistor Type :
- PNP
- RoHS Status :
- ROHS3 Compliant
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 200mA, 2A
- Mount :
- Surface Mount
- hFE Min :
- 250
- Transistor Element Material :
- SILICON
- Voltage - Rated DC :
- -60V
- Frequency :
- 75MHz
- JESD-609 Code :
- e3
- Factory Lead Time :
- 20 Weeks
- Max Collector Current :
- 2A
- Terminal Finish :
- Tin (Sn)
- Terminal Form :
- Gull wing
- Number of Pins :
- 3
- Published :
- 2017
- Base Part Number :
- FSB660
- Collector Base Voltage (VCBO) :
- -60V
- Power Dissipation :
- 500mW
- Width :
- 1.4mm
- Number of Terminations :
- 3
- Radiation Hardening :
- No
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 250 @ 500mA 2V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Max Power Dissipation :
- 500mW
- Operating Temperature :
- -55°C~150°C TJ
- Gain Bandwidth Product :
- 75MHz
- Element Configuration :
- Single
- Max Breakdown Voltage :
- 60V
- Height :
- 940μm
- Length :
- 2.92mm
- Polarity/Channel Type :
- PNP
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current Rating :
- -2A
- REACH SVHC :
- No SVHC
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Collector Emitter Saturation Voltage :
- 300mV
- Mounting Type :
- Surface Mount
- Weight :
- 30mg
- Collector Emitter Breakdown Voltage :
- 60V
- Lead Free :
- Lead Free
- ECCN Code :
- EAR99
- Transition Frequency :
- 75MHz
- Datasheets
- FSB660A
PNP -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
FSB660A Overview
This device has a DC current gain of 250 @ 500mA 2V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 300mV.A VCE saturation (Max) of 300mV @ 200mA, 2A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at -5V.This device has a current rating of -2A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 75MHz.A breakdown input voltage of 60V volts can be used.A maximum collector current of 2A volts is possible.
FSB660A Features
the DC current gain for this device is 250 @ 500mA 2V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 200mA, 2A
the emitter base voltage is kept at -5V
the current rating of this device is -2A
a transition frequency of 75MHz
FSB660A Applications
There are a lot of ON Semiconductor
FSB660A applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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