FSB660A
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- Mfr.Part #
- FSB660A
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 60V 2A SOT23-3
- Stock
- 32,009
- In Stock ：
- 32,009
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Base Voltage (VCBO) :
- -60V
- Operating Temperature :
- -55°C~150°C TJ
- Number of Terminations :
- 3
- Frequency :
- 75MHz
- Length :
- 2.92mm
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- hFE Min :
- 250
- Width :
- 1.4mm
- Published :
- 2017
- Weight :
- 30mg
- Max Power Dissipation :
- 500mW
- Terminal Form :
- Gull wing
- Packaging :
- Tape and Reel (TR)
- Factory Lead Time :
- 20 Weeks
- Collector Emitter Saturation Voltage :
- 300mV
- ECCN Code :
- EAR99
- Radiation Hardening :
- No
- Current Rating :
- -2A
- Terminal Position :
- Dual
- Voltage - Rated DC :
- -60V
- Number of Pins :
- 3
- Max Breakdown Voltage :
- 60V
- REACH SVHC :
- No SVHC
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 200mA, 2A
- Base Part Number :
- FSB660
- Collector Emitter Breakdown Voltage :
- 60V
- Lead Free :
- Lead Free
- Pbfree Code :
- yes
- Mount :
- Surface Mount
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 250 @ 500mA 2V
- Polarity/Channel Type :
- PNP
- Transistor Type :
- PNP
- Element Configuration :
- Single
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Collector Emitter Voltage (VCEO) :
- 60V
- Transition Frequency :
- 75MHz
- Gain Bandwidth Product :
- 75MHz
- JESD-609 Code :
- e3
- Terminal Finish :
- Tin (Sn)
- Max Collector Current :
- 2A
- Power Dissipation :
- 500mW
- Height :
- 940μm
- Emitter Base Voltage (VEBO) :
- -5V
- Transistor Element Material :
- SILICON
- RoHS Status :
- ROHS3 Compliant
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Number of Elements :
- 1
- Mounting Type :
- Surface Mount
- Datasheets
- FSB660A
PNP -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
FSB660A Overview
This device has a DC current gain of 250 @ 500mA 2V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 300mV.A VCE saturation (Max) of 300mV @ 200mA, 2A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at -5V.This device has a current rating of -2A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 75MHz.A breakdown input voltage of 60V volts can be used.A maximum collector current of 2A volts is possible.
FSB660A Features
the DC current gain for this device is 250 @ 500mA 2V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 200mA, 2A
the emitter base voltage is kept at -5V
the current rating of this device is -2A
a transition frequency of 75MHz
FSB660A Applications
There are a lot of ON Semiconductor
FSB660A applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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