FSB660
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- Mfr.Part #
- FSB660
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 60V 2A SOT23-3
- Stock
- 53,094
- In Stock ：
- 53,094
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Gain Bandwidth Product :
- 75MHz
- REACH SVHC :
- No SVHC
- Polarity/Channel Type :
- PNP
- Transistor Type :
- PNP
- Power Dissipation :
- 500mW
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- -55°C~150°C TJ
- Transition Frequency :
- 75MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 250 @ 500mA 2V
- Collector Emitter Breakdown Voltage :
- 60V
- Height :
- 940μm
- Transistor Element Material :
- SILICON
- Radiation Hardening :
- No
- Base Part Number :
- FSB660
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 200mA, 2A
- Weight :
- 30mg
- Max Power Dissipation :
- 500mW
- Max Breakdown Voltage :
- 60V
- hFE Min :
- 250
- Mounting Type :
- Surface Mount
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Emitter Base Voltage (VEBO) :
- -5V
- Pbfree Code :
- yes
- JESD-609 Code :
- e3
- RoHS Status :
- ROHS3 Compliant
- Number of Pins :
- 3
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Packaging :
- Tape and Reel (TR)
- Number of Terminations :
- 3
- ECCN Code :
- EAR99
- Element Configuration :
- Single
- Mount :
- Surface Mount
- Terminal Finish :
- Tin (Sn)
- Collector Base Voltage (VCBO) :
- -60V
- Width :
- 1.4mm
- Lead Free :
- Lead Free
- Max Collector Current :
- 2A
- Current Rating :
- -2A
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Terminal Form :
- Gull wing
- Length :
- 2.92mm
- Terminal Position :
- Dual
- Number of Elements :
- 1
- Factory Lead Time :
- 20 Weeks
- Collector Emitter Saturation Voltage :
- 300mV
- Frequency :
- 75MHz
- Published :
- 2017
- Voltage - Rated DC :
- -60V
- Collector Emitter Voltage (VCEO) :
- 60V
- Datasheets
- FSB660
PNP -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
FSB660A Overview
This device has a DC current gain of 250 @ 500mA 2V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 300mV.A VCE saturation (Max) of 300mV @ 200mA, 2A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at -5V.This device has a current rating of -2A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 75MHz.A breakdown input voltage of 60V volts can be used.A maximum collector current of 2A volts is possible.
FSB660A Features
the DC current gain for this device is 250 @ 500mA 2V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 200mA, 2A
the emitter base voltage is kept at -5V
the current rating of this device is -2A
a transition frequency of 75MHz
FSB660A Applications
There are a lot of ON Semiconductor
FSB660A applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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