FSB660
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- Mfr.Part #
- FSB660
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 60V 2A SOT23-3
- Stock
- 53,094
- In Stock ：
- 53,094
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Polarity/Channel Type :
- PNP
- Height :
- 940μm
- Published :
- 2017
- Packaging :
- Tape and Reel (TR)
- Transistor Type :
- PNP
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mount :
- Surface Mount
- Voltage - Rated DC :
- -60V
- Current Rating :
- -2A
- Factory Lead Time :
- 20 Weeks
- Base Part Number :
- FSB660
- Pbfree Code :
- yes
- hFE Min :
- 250
- Collector Base Voltage (VCBO) :
- -60V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Max Breakdown Voltage :
- 60V
- Radiation Hardening :
- No
- Terminal Form :
- Gull wing
- REACH SVHC :
- No SVHC
- Lead Free :
- Lead Free
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 250 @ 500mA 2V
- JESD-609 Code :
- e3
- Element Configuration :
- Single
- Power Dissipation :
- 500mW
- Transistor Element Material :
- SILICON
- Collector Emitter Voltage (VCEO) :
- 60V
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 200mA, 2A
- Weight :
- 30mg
- Number of Pins :
- 3
- Max Collector Current :
- 2A
- Mounting Type :
- Surface Mount
- Length :
- 2.92mm
- ECCN Code :
- EAR99
- Collector Emitter Saturation Voltage :
- 300mV
- Max Power Dissipation :
- 500mW
- Frequency :
- 75MHz
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Collector Emitter Breakdown Voltage :
- 60V
- Terminal Finish :
- Tin (Sn)
- Width :
- 1.4mm
- Transition Frequency :
- 75MHz
- Gain Bandwidth Product :
- 75MHz
- Terminal Position :
- Dual
- Operating Temperature :
- -55°C~150°C TJ
- Emitter Base Voltage (VEBO) :
- -5V
- RoHS Status :
- ROHS3 Compliant
- Number of Terminations :
- 3
- Datasheets
- FSB660
PNP -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
FSB660A Overview
This device has a DC current gain of 250 @ 500mA 2V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 300mV.A VCE saturation (Max) of 300mV @ 200mA, 2A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at -5V.This device has a current rating of -2A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 75MHz.A breakdown input voltage of 60V volts can be used.A maximum collector current of 2A volts is possible.
FSB660A Features
the DC current gain for this device is 250 @ 500mA 2V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 200mA, 2A
the emitter base voltage is kept at -5V
the current rating of this device is -2A
a transition frequency of 75MHz
FSB660A Applications
There are a lot of ON Semiconductor
FSB660A applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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