FSB660
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- Mfr.Part #
- FSB660
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 60V 2A SOT23-3
- Stock
- 53,094
- In Stock ：
- 53,094
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Pins :
- 3
- Gain Bandwidth Product :
- 75MHz
- Transition Frequency :
- 75MHz
- Height :
- 940μm
- Mount :
- Surface Mount
- hFE Min :
- 250
- Lead Free :
- Lead Free
- Collector Emitter Voltage (VCEO) :
- 60V
- Max Breakdown Voltage :
- 60V
- Packaging :
- Tape and Reel (TR)
- Radiation Hardening :
- No
- Power Dissipation :
- 500mW
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- Transistor Type :
- PNP
- Terminal Form :
- Gull wing
- Collector Emitter Saturation Voltage :
- 300mV
- RoHS Status :
- ROHS3 Compliant
- Terminal Position :
- Dual
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Polarity/Channel Type :
- PNP
- Weight :
- 30mg
- Collector Base Voltage (VCBO) :
- -60V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 250 @ 500mA 2V
- Frequency :
- 75MHz
- Terminal Finish :
- Tin (Sn)
- JESD-609 Code :
- e3
- REACH SVHC :
- No SVHC
- Voltage - Rated DC :
- -60V
- Number of Elements :
- 1
- Operating Temperature :
- -55°C~150°C TJ
- Max Power Dissipation :
- 500mW
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Max Collector Current :
- 2A
- Published :
- 2017
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 200mA, 2A
- Base Part Number :
- FSB660
- Element Configuration :
- Single
- Width :
- 1.4mm
- ECCN Code :
- EAR99
- Mounting Type :
- Surface Mount
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Pbfree Code :
- yes
- Collector Emitter Breakdown Voltage :
- 60V
- Current Rating :
- -2A
- Emitter Base Voltage (VEBO) :
- -5V
- Number of Terminations :
- 3
- Factory Lead Time :
- 20 Weeks
- Length :
- 2.92mm
- Datasheets
- FSB660
PNP -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
FSB660A Overview
This device has a DC current gain of 250 @ 500mA 2V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 300mV.A VCE saturation (Max) of 300mV @ 200mA, 2A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at -5V.This device has a current rating of -2A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 75MHz.A breakdown input voltage of 60V volts can be used.A maximum collector current of 2A volts is possible.
FSB660A Features
the DC current gain for this device is 250 @ 500mA 2V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 200mA, 2A
the emitter base voltage is kept at -5V
the current rating of this device is -2A
a transition frequency of 75MHz
FSB660A Applications
There are a lot of ON Semiconductor
FSB660A applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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