FQU1N60TU

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

6nC @ 10V

Avalanche Energy Rating (Eas) :

50 mJ

Power Dissipation-Max :

2.5W Ta 30W Tc

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

Packaging :

Tube

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain Current-Max (Abs) (ID) :

1A

Qualification Status :

COMMERCIAL

Drive Voltage (Max Rds On,Min Rds On) :

10V

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

FET Type :

N-Channel

JESD-30 Code :

R-PSIP-T3

Pulsed Drain Current-Max (IDM) :

4A

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

5V @ 250μA

Vgs (Max) :

±30V

Input Capacitance (Ciss) (Max) @ Vds :

150pF @ 25V

Configuration :

SINGLE WITH BUILT-IN DIODE

Surface Mount :

No

Pin Count :

3

Drain to Source Voltage (Vdss) :

600V

Series :

QFET®

Transistor Application :

SWITCHING

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

Not Applicable

Mounting Type :

Through Hole

Number of Terminations :

3

Terminal Position :

Single

Operating Temperature :

-55°C~150°C TJ

Rds On (Max) @ Id, Vgs :

11.5 Ω @ 500mA, 10V

Current - Continuous Drain (Id) @ 25°C :

1A Tc

Pbfree Code :

yes

Terminal Finish :

MATTE TIN

DS Breakdown Voltage-Min :

600V