FQU10N20CTU

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Radiation Hardening :

No

Mount :

Through Hole

Operating Temperature :

-55°C~150°C TJ

Number of Terminations :

3

RoHS Status :

ROHS3 Compliant

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

510pF @ 25V

Lead Free :

Lead Free

Weight :

343.08mg

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current Rating :

7.8A

Power Dissipation :

50W

Vgs (Max) :

±30V

Series :

QFET®

Voltage - Rated DC :

200V

Rds On (Max) @ Id, Vgs :

360m Ω @ 3.9A, 10V

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Rise Time :

92ns

Published :

1998

Current - Continuous Drain (Id) @ 25°C :

7.8A Tc

Element Configuration :

Single

Vgs(th) (Max) @ Id :

4V @ 250µA

Power Dissipation-Max :

50W Tc

Number of Elements :

1

Packaging :

Tube

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Continuous Drain Current (ID) :

7.8A

Number of Pins :

3

Transistor Element Material :

SILICON

Factory Lead Time :

9 Weeks

Lifecycle Status :

ACTIVE (Last Updated: 5 days ago)

Gate Charge (Qg) (Max) @ Vgs :

26nC @ 10V

Pbfree Code :

yes

Drain to Source Breakdown Voltage :

200V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Turn On Delay Time :

11 ns

Turn-Off Delay Time :

70 ns

Fall Time (Typ) :

72 ns

Gate to Source Voltage (Vgs) :

30V

ECCN Code :

EAR99

Mounting Type :

Through Hole