FQU17P06TU

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Turn On Delay Time :

13 ns

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Rise Time :

100ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~150°C TJ

FET Type :

P-Channel

Lead Free :

Lead Free

Drive Voltage (Max Rds On,Min Rds On) :

10V

Published :

2014

Power Dissipation :

2.5W

Lifecycle Status :

ACTIVE (Last Updated: 5 days ago)

Weight :

343.08mg

Width :

2.5mm

Drain to Source Breakdown Voltage :

-60V

Drain to Source Voltage (Vdss) :

60V

Mount :

Through Hole

REACH SVHC :

No SVHC

Current - Continuous Drain (Id) @ 25°C :

12A Tc

Fall Time (Typ) :

60 ns

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Vgs (Max) :

±25V

Input Capacitance (Ciss) (Max) @ Vds :

900pF @ 25V

Gate Charge (Qg) (Max) @ Vgs :

27nC @ 10V

Number of Elements :

1

Contact Plating :

Tin

Number of Terminations :

3

Radiation Hardening :

No

Rds On (Max) @ Id, Vgs :

135m Ω @ 6A, 10V

Voltage - Rated DC :

-60V

Power Dissipation-Max :

2.5W Ta 44W Tc

JESD-609 Code :

e3

Length :

6.8mm

Current Rating :

-12A

Series :

QFET®

Packaging :

Tube

Threshold Voltage :

-4V

Gate to Source Voltage (Vgs) :

25V

Vgs(th) (Max) @ Id :

4V @ 250µA

Transistor Application :

SWITCHING

Turn-Off Delay Time :

22 ns

Pbfree Code :

yes

Mounting Type :

Through Hole

Pulsed Drain Current-Max (IDM) :

48A

Resistance :

135mOhm

Operating Mode :

ENHANCEMENT MODE

Element Configuration :

Single

Height :

7.57mm

Continuous Drain Current (ID) :

-12A

Number of Pins :

3

Transistor Element Material :

SILICON

Factory Lead Time :

7 Weeks