FQU12N20TU

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Mount :

Through Hole

RoHS Status :

ROHS3 Compliant

Number of Pins :

3

Weight :

343.08mg

Power Dissipation-Max :

2.5W Ta 55W Tc

Number of Terminations :

3

Fall Time (Typ) :

55 ns

Radiation Hardening :

No

Rise Time :

120ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs (Max) :

±30V

Drain Current-Max (Abs) (ID) :

9A

Input Capacitance (Ciss) (Max) @ Vds :

910pF @ 25V

Operating Temperature :

-55°C~150°C TJ

Drain to Source Breakdown Voltage :

200V

Rds On (Max) @ Id, Vgs :

280m Ω @ 4.5A, 10V

Drain-source On Resistance-Max :

0.28Ohm

Current Rating :

9A

Voltage - Rated DC :

200V

Transistor Element Material :

SILICON

Factory Lead Time :

6 Weeks

Turn-Off Delay Time :

30 ns

Published :

2013

Vgs(th) (Max) @ Id :

5V @ 250μA

Continuous Drain Current (ID) :

9A

Element Configuration :

Single

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Terminal Finish :

Tin (Sn)

Turn On Delay Time :

13 ns

Lead Free :

Lead Free

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

JESD-609 Code :

e3

Pbfree Code :

yes

Series :

QFET®

Power Dissipation :

2.5W

Mounting Type :

Through Hole

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

30V

Lifecycle Status :

ACTIVE (Last Updated: 5 days ago)

Gate Charge (Qg) (Max) @ Vgs :

23nC @ 10V

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

9A Tc

Packaging :

Tube

FET Type :

N-Channel

ECCN Code :

EAR99