FQU11P06TU

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

REACH SVHC :

No SVHC

Vgs (Max) :

±30V

FET Type :

P-Channel

Drain to Source Voltage (Vdss) :

60V

Power Dissipation :

2.5W

Transistor Application :

SWITCHING

Turn On Delay Time :

6.5 ns

Gate to Source Voltage (Vgs) :

30V

Mounting Type :

Through Hole

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3

Packaging :

Tube

Series :

QFET®

Factory Lead Time :

4 Weeks

Recovery Time :

83 ns

Rise Time :

40ns

Number of Elements :

1

Transistor Element Material :

SILICON

Terminal Finish :

Tin (Sn)

Lifecycle Status :

ACTIVE (Last Updated: 5 days ago)

Lead Free :

Lead Free

Pbfree Code :

yes

Current Rating :

-9.4A

Number of Pins :

3

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 10V

Height :

6.1mm

Element Configuration :

Single

Vgs(th) (Max) @ Id :

4V @ 250µA

Weight :

343.08mg

Mount :

Through Hole

Width :

2.3mm

Fall Time (Typ) :

45 ns

Continuous Drain Current (ID) :

-9.4A

Threshold Voltage :

-4V

Drain to Source Breakdown Voltage :

-60V

Current - Continuous Drain (Id) @ 25°C :

9.4A Tc

Input Capacitance (Ciss) (Max) @ Vds :

550pF @ 25V

Published :

2014

Voltage - Rated DC :

-60V

Number of Terminations :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99

Turn-Off Delay Time :

15 ns

Operating Temperature :

-55°C~150°C TJ

Radiation Hardening :

No

Rds On (Max) @ Id, Vgs :

185m Ω @ 4.7A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation-Max :

2.5W Ta 38W Tc

Length :

6.6mm