FQU13N10LTU

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Fall Time (Typ) :

72 ns

Mounting Type :

Through Hole

Drain to Source Breakdown Voltage :

100V

ECCN Code :

EAR99

Current Rating :

10A

Radiation Hardening :

No

Gate Charge (Qg) (Max) @ Vgs :

12nC @ 5V

Element Configuration :

Single

Gate to Source Voltage (Vgs) :

20V

Terminal Finish :

Tin (Sn)

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

520pF @ 25V

RoHS Status :

ROHS3 Compliant

Published :

2000

Voltage - Rated DC :

100V

Operating Temperature :

-55°C~150°C TJ

Rds On (Max) @ Id, Vgs :

180m Ω @ 5A, 10V

Length :

6.6mm

JESD-609 Code :

e3

Resistance :

180mOhm

Turn On Delay Time :

7.5 ns

Power Dissipation-Max :

2.5W Ta 40W Tc

Packaging :

Tube

Height :

6.1mm

Current - Continuous Drain (Id) @ 25°C :

10A Tc

Pulsed Drain Current-Max (IDM) :

40A

Mount :

Through Hole

REACH SVHC :

No SVHC

Number of Pins :

3

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Vgs(th) (Max) @ Id :

2V @ 250μA

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Rise Time :

220ns

Lead Free :

Lead Free

Width :

2.3mm

Power Dissipation :

2.5W

Number of Terminations :

3

Factory Lead Time :

5 Weeks

Weight :

343.08mg

Pbfree Code :

yes

Vgs (Max) :

±20V

Turn-Off Delay Time :

22 ns

Threshold Voltage :

2V

Lifecycle Status :

ACTIVE (Last Updated: 5 days ago)

Number of Elements :

1

FET Type :

N-Channel

Continuous Drain Current (ID) :

10A

Series :

QFET®

Avalanche Energy Rating (Eas) :

95 mJ