FQU10N20LTU

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

2V @ 250μA

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

Peak Reflow Temperature (Cel) :

Not Applicable

Current - Continuous Drain (Id) @ 25°C :

7.6A Tc

Terminal Finish :

MATTE TIN

Avalanche Energy Rating (Eas) :

180 mJ

FET Type :

N-Channel

Drain to Source Voltage (Vdss) :

200V

Configuration :

SINGLE WITH BUILT-IN DIODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 5V

Power Dissipation-Max :

2.5W Ta 51W Tc

Rds On (Max) @ Id, Vgs :

360m Ω @ 3.8A, 10V

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Pin Count :

3

Pulsed Drain Current-Max (IDM) :

30.4A

Operating Temperature :

-55°C~150°C TJ

JESD-609 Code :

e3

Surface Mount :

No

Terminal Position :

Single

Drain Current-Max (Abs) (ID) :

7.6A

Mounting Type :

Through Hole

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Packaging :

Tube

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Qualification Status :

COMMERCIAL

Transistor Element Material :

SILICON

Drain-source On Resistance-Max :

0.38Ohm

DS Breakdown Voltage-Min :

200V

Input Capacitance (Ciss) (Max) @ Vds :

830pF @ 25V

JESD-30 Code :

R-PSIP-T3

Number of Terminations :

3

Vgs (Max) :

±20V

Series :

QFET®

Pbfree Code :

yes

Reach Compliance Code :

Unknown