FQU12N20TU

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

QFET®

Factory Lead Time :

6 Weeks

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Lead Free :

Lead Free

RoHS Status :

ROHS3 Compliant

Mounting Type :

Through Hole

FET Type :

N-Channel

ECCN Code :

EAR99

Published :

2013

Lifecycle Status :

ACTIVE (Last Updated: 5 days ago)

Vgs (Max) :

±30V

Current Rating :

9A

Radiation Hardening :

No

Vgs(th) (Max) @ Id :

5V @ 250μA

Rise Time :

120ns

Current - Continuous Drain (Id) @ 25°C :

9A Tc

Drain to Source Breakdown Voltage :

200V

Number of Pins :

3

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

3

Voltage - Rated DC :

200V

Terminal Finish :

Tin (Sn)

Turn On Delay Time :

13 ns

Rds On (Max) @ Id, Vgs :

280m Ω @ 4.5A, 10V

Drain-source On Resistance-Max :

0.28Ohm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Turn-Off Delay Time :

30 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tube

Continuous Drain Current (ID) :

9A

Input Capacitance (Ciss) (Max) @ Vds :

910pF @ 25V

Pbfree Code :

yes

Transistor Element Material :

SILICON

Drain Current-Max (Abs) (ID) :

9A

Gate to Source Voltage (Vgs) :

30V

Operating Temperature :

-55°C~150°C TJ

Weight :

343.08mg

Fall Time (Typ) :

55 ns

Number of Elements :

1

Mount :

Through Hole

Power Dissipation :

2.5W

Power Dissipation-Max :

2.5W Ta 55W Tc

Gate Charge (Qg) (Max) @ Vgs :

23nC @ 10V

Element Configuration :

Single

JESD-609 Code :

e3

Transistor Application :

SWITCHING