FQU1N60CTU

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Mfr.Part #
FQU1N60CTU
Manufacturer
onsemi
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Datasheet
Download
Description
MOSFET N-CH 600V 1A IPAK
Stock
942
In Stock :
942

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Turn-Off Delay Time :
13 ns
Height :
6.1mm
Package / Case :
TO-251-3 Short Leads, IPak, TO-251AA
RoHS Status :
ROHS3 Compliant
Terminal Finish :
Tin (Sn)
JESD-609 Code :
e3
Operating Mode :
ENHANCEMENT MODE
Vgs (Max) :
±30V
Current Rating :
1A
Lifecycle Status :
ACTIVE (Last Updated: 5 days ago)
Pulsed Drain Current-Max (IDM) :
4A
Fall Time (Typ) :
27 ns
Number of Pins :
3
Drive Voltage (Max Rds On,Min Rds On) :
10V
Operating Temperature :
-55°C~150°C TJ
Vgs(th) (Max) @ Id :
4V @ 250µA
Gate to Source Voltage (Vgs) :
30V
Published :
2013
Resistance :
11.5Ohm
Rds On (Max) @ Id, Vgs :
11.5 Ω @ 500mA, 10V
Length :
6.6mm
Element Configuration :
Single
Pbfree Code :
yes
Series :
QFET®
Weight :
343.08mg
Power Dissipation-Max :
2.5W Ta 28W Tc
Transistor Application :
SWITCHING
Power Dissipation :
2.5W
Threshold Voltage :
4V
Width :
2.3mm
Turn On Delay Time :
7 ns
REACH SVHC :
No SVHC
Transistor Element Material :
SILICON
Drain Current-Max (Abs) (ID) :
1A
Number of Terminations :
3
Factory Lead Time :
4 Weeks
Continuous Drain Current (ID) :
1A
Rise Time :
21ns
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Number of Elements :
1
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
FET Type :
N-Channel
Mounting Type :
Through Hole
Gate Charge (Qg) (Max) @ Vgs :
6.2nC @ 10V
Packaging :
Tube
Drain to Source Breakdown Voltage :
600V
Reach Compliance Code :
not_compliant
Input Capacitance (Ciss) (Max) @ Vds :
170pF @ 25V
Lead Free :
Lead Free
Voltage - Rated DC :
600V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Mount :
Through Hole
ECCN Code :
EAR99
Current - Continuous Drain (Id) @ 25°C :
1A Tc
Datasheets
FQU1N60CTU
Introducing Transistors - FETs, MOSFETs - Single onsemi FQU1N60CTU from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-251-3 Short Leads, IPak, TO-251AA, Number of Pins:3, Operating Temperature:-55°C~150°C TJ, Number of Terminations:3, Mounting Type:Through Hole, FQU1N60CTU pinout, FQU1N60CTU datasheet PDF, FQU1N60CTU amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FQU1N60CTU ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FQU1N60CTU


N-Channel Tube 11.5 Ω @ 500mA, 10V ±30V 170pF @ 25V 6.2nC @ 10V TO-251-3 Short Leads, IPak, TO-251AA

FQU1N60CTU Description


The planar stripe and DMOS technologies exclusive to ON Semiconductor are used to create this N-Channel enhancement mode power MOSFET. This cutting-edge MOSFET technology has been specifically designed to offer excellent switching performance, high avalanche energy strength, and reduced on-state resistance. Switched-mode power supply, active power factor correction (PFC), and electronic lamp ballasts are all compatible with these products.



FQU1N60CTU Features


  • 1A, 600V, RDS(on) = 11.5Ω(Max.) @VGS = 10 V, ID = 0.5A

  • Low Gate Charge ( Typ. 4.8nC)

  • Low Crss ( Typ. 3.5pF)

  • 100% Avalanche Tested

  • RoHS Compliant



FQU1N60CTU Applications


  • Power Management

  • Consumer Electronics

  • Portable Devices

  • Industrial


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