FQU1N60CTU
- Mfr.Part #
- FQU1N60CTU
- Manufacturer
- onsemi
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 1A IPAK
- Stock
- 942
- In Stock :
- 942
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Turn-Off Delay Time :
- 13 ns
- Height :
- 6.1mm
- Package / Case :
- TO-251-3 Short Leads, IPak, TO-251AA
- RoHS Status :
- ROHS3 Compliant
- Terminal Finish :
- Tin (Sn)
- JESD-609 Code :
- e3
- Operating Mode :
- ENHANCEMENT MODE
- Vgs (Max) :
- ±30V
- Current Rating :
- 1A
- Lifecycle Status :
- ACTIVE (Last Updated: 5 days ago)
- Pulsed Drain Current-Max (IDM) :
- 4A
- Fall Time (Typ) :
- 27 ns
- Number of Pins :
- 3
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Operating Temperature :
- -55°C~150°C TJ
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Gate to Source Voltage (Vgs) :
- 30V
- Published :
- 2013
- Resistance :
- 11.5Ohm
- Rds On (Max) @ Id, Vgs :
- 11.5 Ω @ 500mA, 10V
- Length :
- 6.6mm
- Element Configuration :
- Single
- Pbfree Code :
- yes
- Series :
- QFET®
- Weight :
- 343.08mg
- Power Dissipation-Max :
- 2.5W Ta 28W Tc
- Transistor Application :
- SWITCHING
- Power Dissipation :
- 2.5W
- Threshold Voltage :
- 4V
- Width :
- 2.3mm
- Turn On Delay Time :
- 7 ns
- REACH SVHC :
- No SVHC
- Transistor Element Material :
- SILICON
- Drain Current-Max (Abs) (ID) :
- 1A
- Number of Terminations :
- 3
- Factory Lead Time :
- 4 Weeks
- Continuous Drain Current (ID) :
- 1A
- Rise Time :
- 21ns
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Number of Elements :
- 1
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- FET Type :
- N-Channel
- Mounting Type :
- Through Hole
- Gate Charge (Qg) (Max) @ Vgs :
- 6.2nC @ 10V
- Packaging :
- Tube
- Drain to Source Breakdown Voltage :
- 600V
- Reach Compliance Code :
- not_compliant
- Input Capacitance (Ciss) (Max) @ Vds :
- 170pF @ 25V
- Lead Free :
- Lead Free
- Voltage - Rated DC :
- 600V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mount :
- Through Hole
- ECCN Code :
- EAR99
- Current - Continuous Drain (Id) @ 25°C :
- 1A Tc
- Datasheets
- FQU1N60CTU

N-Channel Tube 11.5 Ω @ 500mA, 10V ±30V 170pF @ 25V 6.2nC @ 10V TO-251-3 Short Leads, IPak, TO-251AA
FQU1N60CTU Description
The planar stripe and DMOS technologies exclusive to ON Semiconductor are used to create this N-Channel enhancement mode power MOSFET. This cutting-edge MOSFET technology has been specifically designed to offer excellent switching performance, high avalanche energy strength, and reduced on-state resistance. Switched-mode power supply, active power factor correction (PFC), and electronic lamp ballasts are all compatible with these products.
FQU1N60CTU Features
-
1A, 600V, RDS(on) = 11.5Ω(Max.) @VGS = 10 V, ID = 0.5A
-
Low Gate Charge ( Typ. 4.8nC)
-
Low Crss ( Typ. 3.5pF)
-
100% Avalanche Tested
-
RoHS Compliant
FQU1N60CTU Applications
-
Power Management
-
Consumer Electronics
-
Portable Devices
-
Industrial
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