FQP8P10

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

TO-220-3

Continuous Drain Current (ID) :

8A

Element Configuration :

Single

Turn On Delay Time :

11 ns

Operating Temperature :

-55°C~175°C TJ

Width :

4.7mm

Operating Mode :

ENHANCEMENT MODE

Dual Supply Voltage :

-100V

RoHS Status :

ROHS3 Compliant

Terminal Finish :

Tin (Sn)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Current - Continuous Drain (Id) @ 25°C :

8A Tc

Vgs(th) (Max) @ Id :

4V @ 250µA

Power Dissipation-Max :

65W Tc

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Termination :

Through Hole

Mounting Type :

Through Hole

Drain to Source Voltage (Vdss) :

100V

JESD-609 Code :

e3

Drain Current-Max (Abs) (ID) :

8A

Voltage - Rated DC :

-100V

Lead Free :

Lead Free

Drain to Source Breakdown Voltage :

-100V

Weight :

1.8g

Rise Time :

110ns

Gate to Source Voltage (Vgs) :

30V

Number of Elements :

1

Mount :

Through Hole

Published :

2002

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Packaging :

Tube

Turn-Off Delay Time :

20 ns

Length :

10.67mm

FET Type :

P-Channel

Transistor Application :

SWITCHING

Power Dissipation :

65W

Radiation Hardening :

No

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 10V

Fall Time (Typ) :

35 ns

JEDEC-95 Code :

TO-220AB

Nominal Vgs :

-4 V

Rds On (Max) @ Id, Vgs :

530m Ω @ 4A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

470pF @ 25V

Number of Terminations :

3

Series :

QFET®

REACH SVHC :

No SVHC

ECCN Code :

EAR99

Number of Pins :

3

Current Rating :

-8A

Vgs (Max) :

±30V

Height :

16.3mm

Factory Lead Time :

4 Weeks

Pbfree Code :

yes