FQP85N06

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Lead Free :

Lead Free

Element Configuration :

Single

Number of Pins :

3

Terminal Finish :

Tin (Sn)

Operating Temperature :

-55°C~175°C TJ

Published :

2013

Turn-Off Delay Time :

175 ns

Transistor Application :

SWITCHING

Current Rating :

85A

Drain to Source Breakdown Voltage :

60V

Voltage :

60V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

QFET®

Number of Terminations :

3

JESD-609 Code :

e3

Continuous Drain Current (ID) :

85A

Threshold Voltage :

4V

Pbfree Code :

yes

Nominal Vgs :

4 V

Package / Case :

TO-220-3

Vgs (Max) :

±25V

ECCN Code :

EAR99

Current :

85A

Current - Continuous Drain (Id) @ 25°C :

85A Tc

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Voltage - Rated DC :

60V

Mount :

Through Hole

FET Type :

N-Channel

Factory Lead Time :

5 Weeks

Weight :

4.535924g

Packaging :

Tube

Mounting Type :

Through Hole

Resistance :

10MOhm

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Fall Time (Typ) :

170 ns

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

112nC @ 10V

Height :

9.4mm

Rds On (Max) @ Id, Vgs :

10m Ω @ 42.5A, 10V

Gate to Source Voltage (Vgs) :

25V

REACH SVHC :

No SVHC

Input Capacitance (Ciss) (Max) @ Vds :

4120pF @ 25V

Dual Supply Voltage :

60V

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Power Dissipation :

160W

Power Dissipation-Max :

160W Tc

Rise Time :

230ns

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

4V @ 250µA

RoHS Status :

ROHS3 Compliant

Qualification Status :

Not Qualified

Number of Elements :

1

Turn On Delay Time :

40 ns

Length :

10.1mm

JEDEC-95 Code :

TO-220AB

Width :

4.7mm