FQP85N06

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Mfr.Part #
FQP85N06
Manufacturer
onsemi
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 60V 85A TO220-3
Stock
312
In Stock :
312

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
ECCN Code :
EAR99
Current :
85A
Continuous Drain Current (ID) :
85A
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Gate Charge (Qg) (Max) @ Vgs :
112nC @ 10V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Threshold Voltage :
4V
Published :
2013
Lead Free :
Lead Free
Operating Mode :
ENHANCEMENT MODE
Number of Terminations :
3
Mount :
Through Hole
Drain to Source Breakdown Voltage :
60V
Nominal Vgs :
4 V
Turn-Off Delay Time :
175 ns
RoHS Status :
ROHS3 Compliant
Drive Voltage (Max Rds On,Min Rds On) :
10V
Vgs(th) (Max) @ Id :
4V @ 250µA
Terminal Finish :
Tin (Sn)
Height :
9.4mm
Transistor Element Material :
SILICON
Turn On Delay Time :
40 ns
Length :
10.1mm
Resistance :
10MOhm
Gate to Source Voltage (Vgs) :
25V
JESD-609 Code :
e3
Weight :
4.535924g
Voltage :
60V
Number of Pins :
3
Number of Elements :
1
Power Dissipation-Max :
160W Tc
Rise Time :
230ns
Package / Case :
TO-220-3
Lifecycle Status :
ACTIVE (Last Updated: 1 day ago)
Packaging :
Tube
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Current - Continuous Drain (Id) @ 25°C :
85A Tc
Input Capacitance (Ciss) (Max) @ Vds :
4120pF @ 25V
JEDEC-95 Code :
TO-220AB
Current Rating :
85A
Fall Time (Typ) :
170 ns
Qualification Status :
Not Qualified
Dual Supply Voltage :
60V
Rds On (Max) @ Id, Vgs :
10m Ω @ 42.5A, 10V
Transistor Application :
SWITCHING
Power Dissipation :
160W
Mounting Type :
Through Hole
Operating Temperature :
-55°C~175°C TJ
Element Configuration :
Single
REACH SVHC :
No SVHC
Width :
4.7mm
Vgs (Max) :
±25V
Pbfree Code :
yes
Factory Lead Time :
5 Weeks
Voltage - Rated DC :
60V
FET Type :
N-Channel
Series :
QFET®
Introducing Transistors - FETs, MOSFETs - Single onsemi FQP85N06 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Voltage:60V, Number of Pins:3, Package / Case:TO-220-3, Mounting Type:Through Hole, Operating Temperature:-55°C~175°C TJ, FQP85N06 pinout, FQP85N06 datasheet PDF, FQP85N06 amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FQP85N06 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FQP85N06


N-Channel Tube 10m Ω @ 42.5A, 10V ±25V 4120pF @ 25V 112nC @ 10V TO-220-3

FQP85N06 Description

The FQP85N06 is a TO-220 packaging through-hole 60V N channel enhancement mode power QFET MOSFET. This device uses planar stripe and DMOS technology that has been specifically designed to reduce on-state resistance, improve switching performance, and increase avalanche energy strength. It can be used in applications such as switch-mode power supplies, audio amplifiers, DC motor control, and variable switching power.


FQP85N06 Features

  • Gate to source voltage of ±25V

  • Continuous drain current (Id) of 85A

  • Power dissipation (Pd) of 160W

  • The low gate charge is typical 86nC

  • Low reverse transfer capacitance of typically 165pF

  • Drain to source voltage (Vds) of 60V

  • Low on-state resistance of 800mohm at Vgs 10V

  • Operating temperature range from -55°C to 175°C


FQP85N06 Applications

  • Motor drive

  • DC motor control

  • Power management

  • Switch-mode power supplies

  • Audio amplifier

  • Switching power applications

  • DC/DC converters

  • Other Audio & Video


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