FQP8N80C

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Factory Lead Time :

6 Weeks

RoHS Status :

ROHS3 Compliant

Package / Case :

TO-220-3

Qualification Status :

Not Qualified

Input Capacitance (Ciss) (Max) @ Vds :

2050pF @ 25V

Weight :

1.8g

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Elements :

1

Number of Terminations :

3

Rds On (Max) @ Id, Vgs :

1.55 Ω @ 4A, 10V

Length :

10.1mm

Drain to Source Breakdown Voltage :

800V

REACH SVHC :

No SVHC

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pbfree Code :

yes

Transistor Application :

SWITCHING

Avalanche Energy Rating (Eas) :

850 mJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Width :

4.7mm

Drain Current-Max (Abs) (ID) :

8A

Gate to Source Voltage (Vgs) :

30V

Mount :

Through Hole

JESD-609 Code :

e3

Series :

QFET®

Lead Free :

Lead Free

Height :

9.4mm

Threshold Voltage :

5V

FET Type :

N-Channel

Power Dissipation :

178W

Operating Temperature :

-55°C~150°C TJ

ECCN Code :

EAR99

Gate Charge (Qg) (Max) @ Vgs :

45nC @ 10V

Voltage - Rated DC :

800V

Published :

2013

JEDEC-95 Code :

TO-220AB

Number of Pins :

3

Turn-Off Delay Time :

65 ns

Rise Time :

110ns

Packaging :

Tube

Element Configuration :

Single

Contact Plating :

Tin

Continuous Drain Current (ID) :

8A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

5V @ 250μA

Lifecycle Status :

ACTIVE (Last Updated: 3 hours ago)

Current - Continuous Drain (Id) @ 25°C :

8A Tc

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±30V

Turn On Delay Time :

40 ns

Power Dissipation-Max :

178W Tc

Mounting Type :

Through Hole

Transistor Element Material :

SILICON

Current Rating :

8A

Fall Time (Typ) :

70 ns