FQP85N06
- Mfr.Part #
- FQP85N06
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- POWER FIELD-EFFECT TRANSISTOR, 8
- Stock
- 312
- In Stock :
- 312
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Series :
- QFET®
- Fall Time (Typ) :
- 170 ns
- Current - Continuous Drain (Id) @ 25°C :
- 85A Tc
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Turn On Delay Time :
- 40 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JEDEC-95 Code :
- TO-220AB
- Number of Pins :
- 3
- Nominal Vgs :
- 4 V
- Packaging :
- Tube
- Power Dissipation :
- 160W
- Mounting Type :
- Through Hole
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Package / Case :
- TO-220-3
- Power Dissipation-Max :
- 160W Tc
- Gate Charge (Qg) (Max) @ Vgs :
- 112nC @ 10V
- Mount :
- Through Hole
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Voltage :
- 60V
- Transistor Application :
- SWITCHING
- Terminal Finish :
- Tin (Sn)
- Lead Free :
- Lead Free
- Continuous Drain Current (ID) :
- 85A
- Rise Time :
- 230ns
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature :
- -55°C~175°C TJ
- Published :
- 2013
- Current :
- 85A
- ECCN Code :
- EAR99
- Gate to Source Voltage (Vgs) :
- 25V
- JESD-609 Code :
- e3
- Threshold Voltage :
- 4V
- Vgs (Max) :
- ±25V
- Width :
- 4.7mm
- Height :
- 9.4mm
- Turn-Off Delay Time :
- 175 ns
- Number of Elements :
- 1
- Drain to Source Breakdown Voltage :
- 60V
- Voltage - Rated DC :
- 60V
- Qualification Status :
- Not Qualified
- Rds On (Max) @ Id, Vgs :
- 10m Ω @ 42.5A, 10V
- Operating Mode :
- ENHANCEMENT MODE
- Weight :
- 4.535924g
- Dual Supply Voltage :
- 60V
- Element Configuration :
- Single
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Pbfree Code :
- yes
- Transistor Element Material :
- SILICON
- REACH SVHC :
- No SVHC
- FET Type :
- N-Channel
- Factory Lead Time :
- 5 Weeks
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Current Rating :
- 85A
- Number of Terminations :
- 3
- Length :
- 10.1mm
- Resistance :
- 10MOhm
- Input Capacitance (Ciss) (Max) @ Vds :
- 4120pF @ 25V
- Datasheets
- FQP85N06
FQP85N06 Documents

N-Channel Tube 10m Ω @ 42.5A, 10V ±25V 4120pF @ 25V 112nC @ 10V TO-220-3
FQP85N06 Description
The FQP85N06 is a TO-220 packaging through-hole 60V N channel enhancement mode power QFET MOSFET. This device uses planar stripe and DMOS technology that has been specifically designed to reduce on-state resistance, improve switching performance, and increase avalanche energy strength. It can be used in applications such as switch-mode power supplies, audio amplifiers, DC motor control, and variable switching power.
FQP85N06 Features
-
Gate to source voltage of ±25V
-
Continuous drain current (Id) of 85A
-
Power dissipation (Pd) of 160W
-
The low gate charge is typical 86nC
-
Low reverse transfer capacitance of typically 165pF
-
Drain to source voltage (Vds) of 60V
-
Low on-state resistance of 800mohm at Vgs 10V
-
Operating temperature range from -55°C to 175°C
FQP85N06 Applications
-
Motor drive
-
DC motor control
-
Power management
-
Switch-mode power supplies
-
Audio amplifier
-
Switching power applications
-
DC/DC converters
-
Other Audio & Video
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