FQP8N60C

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation :

147W

Number of Pins :

3

JESD-609 Code :

e3

Gate Charge (Qg) (Max) @ Vgs :

36nC @ 10V

Number of Elements :

1

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Resistance :

1.2Ohm

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Turn On Delay Time :

16.5 ns

Rds On (Max) @ Id, Vgs :

1.2 Ω @ 3.75A, 10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Length :

10.1mm

Input Capacitance (Ciss) (Max) @ Vds :

1255pF @ 25V

Vgs(th) (Max) @ Id :

4V @ 250µA

Weight :

1.8g

Turn-Off Delay Time :

81 ns

Additional Feature :

FAST SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

10V

Package / Case :

TO-220-3

Mounting Type :

Through Hole

Current - Continuous Drain (Id) @ 25°C :

7.5A Tc

Element Configuration :

Single

Current Rating :

7.5A

Series :

QFET®

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2004

Rise Time :

60.5ns

Lead Free :

Lead Free

Nominal Vgs :

4 V

Number of Terminations :

3

Dual Supply Voltage :

600V

Qualification Status :

Not Qualified

Transistor Element Material :

SILICON

JEDEC-95 Code :

TO-220AB

Terminal Finish :

Tin (Sn)

Operating Temperature :

-55°C~150°C TJ

Continuous Drain Current (ID) :

7.5A

Drain to Source Breakdown Voltage :

600V

Mount :

Through Hole

Vgs (Max) :

±30V

Transistor Application :

SWITCHING

Packaging :

Tube

Fall Time (Typ) :

64.5 ns

Lifecycle Status :

ACTIVE, NOT REC (Last Updated: 3 days ago)

Height :

9.4mm

Threshold Voltage :

4V

Power Dissipation-Max :

147W Tc

Width :

4.7mm

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Gate to Source Voltage (Vgs) :

30V

REACH SVHC :

No SVHC

Pbfree Code :

yes

Termination :

Through Hole

Voltage - Rated DC :

600V