FQP8N60C

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Voltage - Rated DC :

600V

Power Dissipation :

147W

Lifecycle Status :

ACTIVE, NOT REC (Last Updated: 3 days ago)

ECCN Code :

EAR99

REACH SVHC :

No SVHC

Mount :

Through Hole

Termination :

Through Hole

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Dual Supply Voltage :

600V

Drain to Source Breakdown Voltage :

600V

Additional Feature :

FAST SWITCHING

Weight :

1.8g

FET Type :

N-Channel

Power Dissipation-Max :

147W Tc

Nominal Vgs :

4 V

Package / Case :

TO-220-3

Gate to Source Voltage (Vgs) :

30V

Current - Continuous Drain (Id) @ 25°C :

7.5A Tc

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

7.5A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Input Capacitance (Ciss) (Max) @ Vds :

1255pF @ 25V

Element Configuration :

Single

Packaging :

Tube

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Resistance :

1.2Ohm

Number of Terminations :

3

Operating Temperature :

-55°C~150°C TJ

Rise Time :

60.5ns

Published :

2004

Vgs (Max) :

±30V

Mounting Type :

Through Hole

Width :

4.7mm

Fall Time (Typ) :

64.5 ns

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

4V @ 250µA

RoHS Status :

ROHS3 Compliant

JEDEC-95 Code :

TO-220AB

Current Rating :

7.5A

Qualification Status :

Not Qualified

Number of Elements :

1

JESD-609 Code :

e3

Turn-Off Delay Time :

81 ns

Number of Pins :

3

Terminal Finish :

Tin (Sn)

Length :

10.1mm

Lead Free :

Lead Free

Pbfree Code :

yes

Threshold Voltage :

4V

Gate Charge (Qg) (Max) @ Vgs :

36nC @ 10V

Rds On (Max) @ Id, Vgs :

1.2 Ω @ 3.75A, 10V

Operating Mode :

ENHANCEMENT MODE

Turn On Delay Time :

16.5 ns

Height :

9.4mm

Series :

QFET®