FQP8N90C

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

QFET®

FET Type :

N-Channel

Packaging :

Tube

RoHS Status :

ROHS3 Compliant

Gate to Source Voltage (Vgs) :

30V

Transistor Element Material :

SILICON

Mounting Type :

Through Hole

Drain to Source Breakdown Voltage :

900V

Factory Lead Time :

5 Weeks

Current Rating :

6.3A

Peak Reflow Temperature (Cel) :

260

Continuous Drain Current (ID) :

6.3A

Avalanche Energy Rating (Eas) :

850 mJ

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Number of Elements :

1

Voltage - Rated DC :

900V

Element Configuration :

Single

Vgs(th) (Max) @ Id :

5V @ 250μA

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation-Max :

171W Tc

Mount :

Through Hole

Power Dissipation :

171W

Number of Pins :

3

Input Capacitance (Ciss) (Max) @ Vds :

2080pF @ 25V

Number of Terminations :

3

Turn On Delay Time :

40 ns

Operating Temperature :

-55°C~150°C TJ

Weight :

1.8g

Current - Continuous Drain (Id) @ 25°C :

6.3A Tc

Turn-Off Delay Time :

70 ns

Transistor Application :

SWITCHING

Published :

2013

Pbfree Code :

yes

Pulsed Drain Current-Max (IDM) :

25A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Fall Time (Typ) :

70 ns

Rise Time :

110ns

Terminal Finish :

Tin (Sn)

Radiation Hardening :

No

Gate Charge (Qg) (Max) @ Vgs :

45nC @ 10V

Rds On (Max) @ Id, Vgs :

1.9 Ω @ 3.15A, 10V

JESD-609 Code :

e3

Package / Case :

TO-220-3

JEDEC-95 Code :

TO-220AB

Vgs (Max) :

±30V

ECCN Code :

EAR99

Lead Free :

Lead Free