FQP8P10
- Mfr.Part #
- FQP8P10
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- POWER FIELD-EFFECT TRANSISTOR, 8
- Stock
- 110
- In Stock :
- 110
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Input Capacitance (Ciss) (Max) @ Vds :
- 470pF @ 25V
- Mounting Type :
- Through Hole
- Vgs (Max) :
- ±30V
- Gate Charge (Qg) (Max) @ Vgs :
- 15nC @ 10V
- Number of Pins :
- 3
- Factory Lead Time :
- 4 Weeks
- Rds On (Max) @ Id, Vgs :
- 530m Ω @ 4A, 10V
- Packaging :
- Tube
- JEDEC-95 Code :
- TO-220AB
- REACH SVHC :
- No SVHC
- Weight :
- 1.8g
- Rise Time :
- 110ns
- Drain to Source Voltage (Vdss) :
- 100V
- Package / Case :
- TO-220-3
- Terminal Finish :
- Tin (Sn)
- Turn On Delay Time :
- 11 ns
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature :
- -55°C~175°C TJ
- Width :
- 4.7mm
- Radiation Hardening :
- No
- Drain Current-Max (Abs) (ID) :
- 8A
- Drain to Source Breakdown Voltage :
- -100V
- Number of Terminations :
- 3
- JESD-609 Code :
- e3
- Transistor Application :
- SWITCHING
- Published :
- 2002
- Current - Continuous Drain (Id) @ 25°C :
- 8A Tc
- Power Dissipation :
- 65W
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Pbfree Code :
- yes
- Element Configuration :
- Single
- Turn-Off Delay Time :
- 20 ns
- Number of Elements :
- 1
- Gate to Source Voltage (Vgs) :
- 30V
- Voltage - Rated DC :
- -100V
- Power Dissipation-Max :
- 65W Tc
- FET Type :
- P-Channel
- Nominal Vgs :
- -4 V
- Lead Free :
- Lead Free
- Height :
- 16.3mm
- Fall Time (Typ) :
- 35 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Dual Supply Voltage :
- -100V
- ECCN Code :
- EAR99
- Termination :
- Through Hole
- Length :
- 10.67mm
- Operating Mode :
- ENHANCEMENT MODE
- Current Rating :
- -8A
- Series :
- QFET®
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Continuous Drain Current (ID) :
- 8A
- Mount :
- Through Hole
- Transistor Element Material :
- SILICON
- Datasheets
- FQP8P10

P-Channel Tube 530m Ω @ 4A, 10V ±30V 470pF @ 25V 15nC @ 10V 100V TO-220-3
FQP8P10 Description
FQP8P10 is a type of P-Channel QFET? MOSFET provided by ON Semiconductor based on the proprietary, planar stripe, DMOS technology. It is able to provide low on-state resistance, superior switching performance, and high avalanche energy strength. It is ideally suitable for switched-mode power supplies, audio amplifiers, DC motor control, and variable switching power applications.
FQP8P10 Features
-
Low gate charge
-
Low on-state resistance
-
Superior switching performance
-
High avalanche energy strength
-
Available in the TO-220 package
FQP8P10 Applications
-
Switched-mode power supplies
-
Audio amplifier
-
DC motor control
-
Variable switching power applications
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