FQP5N80

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~150°C TJ

Series :

QFET®

Current - Continuous Drain (Id) @ 25°C :

4.8A Tc

Packaging :

Tube

Avalanche Energy Rating (Eas) :

590 mJ

Vgs (Max) :

±30V

Transistor Application :

SWITCHING

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain to Source Voltage (Vdss) :

800V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs(th) (Max) @ Id :

5V @ 250μA

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

Pbfree Code :

yes

Transistor Element Material :

SILICON

Drain Current-Max (Abs) (ID) :

4.8A

Number of Terminations :

3

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

1.25pF @ 25V

Power Dissipation-Max :

140W Tc

JESD-609 Code :

e3

Gate Charge (Qg) (Max) @ Vgs :

33nC @ 10V

Qualification Status :

COMMERCIAL

JESD-30 Code :

R-PSFM-T3

Rds On (Max) @ Id, Vgs :

2.6 Ω @ 2.4A, 10V

Package / Case :

TO-220-3

JEDEC-95 Code :

TO-220AB

Reach Compliance Code :

Unknown

Terminal Position :

Single

Surface Mount :

No

Pin Count :

3

Mounting Type :

Through Hole

Number of Elements :

1

DS Breakdown Voltage-Min :

800V

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

Terminal Finish :

MATTE TIN

Pulsed Drain Current-Max (IDM) :

19.2A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

Not Applicable