FQP55N10

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Through Hole

Number of Elements :

1

JESD-609 Code :

e3

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Operating Temperature :

-55°C~175°C TJ

Fall Time (Typ) :

140 ns

Resistance :

26mOhm

Turn-Off Delay Time :

110 ns

Mount :

Through Hole

Number of Terminations :

3

Number of Pins :

3

JEDEC-95 Code :

TO-220AB

Rise Time :

250ns

Current Rating :

55A

Series :

QFET®

Width :

4.7mm

Transistor Element Material :

SILICON

Package / Case :

TO-220-3

Turn On Delay Time :

25 ns

Element Configuration :

Single

Vgs (Max) :

±25V

Pulsed Drain Current-Max (IDM) :

220A

Current - Continuous Drain (Id) @ 25°C :

55A Tc

Published :

2000

FET Type :

N-Channel

Continuous Drain Current (ID) :

55A

Packaging :

Tube

Contact Plating :

Tin

Drain to Source Breakdown Voltage :

100V

Radiation Hardening :

No

Drive Voltage (Max Rds On,Min Rds On) :

10V

Voltage - Rated DC :

100V

Weight :

1.8g

Gate Charge (Qg) (Max) @ Vgs :

98nC @ 10V

Height :

9.4mm

Input Capacitance (Ciss) (Max) @ Vds :

2730pF @ 25V

Transistor Application :

SWITCHING

Lead Free :

Lead Free

Power Dissipation-Max :

155W Tc

Operating Mode :

ENHANCEMENT MODE

Pbfree Code :

yes

Power Dissipation :

155W

Gate to Source Voltage (Vgs) :

25V

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

26m Ω @ 27.5A, 10V

Length :

10.1mm

Vgs(th) (Max) @ Id :

4V @ 250µA

Factory Lead Time :

5 Weeks