FQP5N40

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Single

Input Capacitance (Ciss) (Max) @ Vds :

460pF @ 25V

Operating Temperature :

-55°C~150°C TJ

Drain Current-Max (Abs) (ID) :

4.5A

Transistor Element Material :

SILICON

Pulsed Drain Current-Max (IDM) :

18A

JEDEC-95 Code :

TO-220AB

Vgs (Max) :

±30V

Number of Terminations :

3

Mounting Type :

Through Hole

JESD-30 Code :

R-PSFM-T3

Avalanche Energy Rating (Eas) :

290 mJ

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

400V

FET Type :

N-Channel

Power Dissipation-Max :

70W Tc

Pin Count :

3

Surface Mount :

No

Terminal Finish :

MATTE TIN

Configuration :

SINGLE WITH BUILT-IN DIODE

Pbfree Code :

yes

Rds On (Max) @ Id, Vgs :

1.6 Ω @ 2.25A, 10V

DS Breakdown Voltage-Min :

400V

Qualification Status :

COMMERCIAL

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs(th) (Max) @ Id :

5V @ 250μA

Peak Reflow Temperature (Cel) :

Not Applicable

JESD-609 Code :

e3

Packaging :

Tube

Gate Charge (Qg) (Max) @ Vgs :

13nC @ 10V

Package / Case :

TO-220-3

Transistor Application :

SWITCHING

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Series :

QFET®

Reach Compliance Code :

Unknown

Current - Continuous Drain (Id) @ 25°C :

4.5A Tc