FQP50N06

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

121W Tc

Mounting Type :

Through Hole

Factory Lead Time :

9 Weeks

Current Rating :

52.4A

Package / Case :

TO-220-3

Transistor Element Material :

SILICON

Fall Time (Typ) :

145 ns

Mount :

Through Hole

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

FET Type :

N-Channel

Resistance :

21mOhm

Length :

10.1mm

Vgs (Max) :

±20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

REACH SVHC :

No SVHC

Turn-Off Delay Time :

80 ns

Number of Elements :

1

Operating Temperature :

-55°C~175°C TJ

Rds On (Max) @ Id, Vgs :

21m Ω @ 26.2A, 10V

Avalanche Energy Rating (Eas) :

990 mJ

Continuous Drain Current (ID) :

52A

Input Capacitance (Ciss) (Max) @ Vds :

1630pF @ 25V

Number of Terminations :

3

JEDEC-95 Code :

TO-220AB

ECCN Code :

EAR99

Packaging :

Tube

Weight :

1.8g

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Power Dissipation :

121W

Threshold Voltage :

2.5V

Rise Time :

380ns

Voltage - Rated DC :

60V

Current - Continuous Drain (Id) @ 25°C :

52.4A Tc

Published :

2013

Width :

4.7mm

Number of Pins :

3

Gate to Source Voltage (Vgs) :

20V

Element Configuration :

Single

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Gate Charge (Qg) (Max) @ Vgs :

32nC @ 5V

Turn On Delay Time :

20 ns

Height :

9.4mm

Lead Free :

Lead Free

Terminal Finish :

Tin (Sn)

Pbfree Code :

yes

Drain to Source Breakdown Voltage :

60V

Radiation Hardening :

No

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Series :

QFET®