FQP5N30

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

Package / Case :

TO-220-3

Drain Current-Max (Abs) (ID) :

5.4A

Qualification Status :

COMMERCIAL

Vgs(th) (Max) @ Id :

5V @ 250μA

RoHS Status :

ROHS3 Compliant

Pulsed Drain Current-Max (IDM) :

21.6A

Rds On (Max) @ Id, Vgs :

900m Ω @ 2.7A, 10V

Operating Temperature :

-55°C~150°C TJ

Drain-source On Resistance-Max :

0.9Ohm

Surface Mount :

No

Configuration :

SINGLE WITH BUILT-IN DIODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Through Hole

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

13nC @ 10V

Vgs (Max) :

±30V

Packaging :

Tube

Pbfree Code :

yes

Pin Count :

3

JEDEC-95 Code :

TO-220AB

Current - Continuous Drain (Id) @ 25°C :

5.4A Tc

Input Capacitance (Ciss) (Max) @ Vds :

430pF @ 25V

Reach Compliance Code :

Unknown

Avalanche Energy Rating (Eas) :

340 mJ

JESD-609 Code :

e3

JESD-30 Code :

R-PSFM-T3

Drain to Source Voltage (Vdss) :

300V

Series :

QFET®

DS Breakdown Voltage-Min :

300V

FET Type :

N-Channel

Terminal Finish :

MATTE TIN

Power Dissipation-Max :

70W Tc

Terminal Position :

Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Terminations :

3

Peak Reflow Temperature (Cel) :

Not Applicable

Operating Mode :

ENHANCEMENT MODE