FQP50N06L
- Mfr.Part #
- FQP50N06L
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 52.4A TO220-3
- Stock
- 7,867
- In Stock :
- 7,867
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Operating Temperature :
- -55°C~175°C TJ
- Radiation Hardening :
- No
- Turn On Delay Time :
- 20 ns
- Number of Elements :
- 1
- Vgs (Max) :
- ±20V
- Drain to Source Breakdown Voltage :
- 60V
- FET Type :
- N-Channel
- Pbfree Code :
- yes
- Gate Charge (Qg) (Max) @ Vgs :
- 32nC @ 5V
- Rise Time :
- 380ns
- Operating Mode :
- ENHANCEMENT MODE
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs(th) (Max) @ Id :
- 2.5V @ 250μA
- Mount :
- Through Hole
- REACH SVHC :
- No SVHC
- Mounting Type :
- Through Hole
- Width :
- 4.7mm
- RoHS Status :
- ROHS3 Compliant
- Height :
- 9.4mm
- Factory Lead Time :
- 9 Weeks
- Packaging :
- Tube
- Element Configuration :
- Single
- Power Dissipation-Max :
- 121W Tc
- Package / Case :
- TO-220-3
- Terminal Finish :
- Tin (Sn)
- Threshold Voltage :
- 2.5V
- Rds On (Max) @ Id, Vgs :
- 21m Ω @ 26.2A, 10V
- ECCN Code :
- EAR99
- Current Rating :
- 52.4A
- Power Dissipation :
- 121W
- Weight :
- 1.8g
- Continuous Drain Current (ID) :
- 52A
- Gate to Source Voltage (Vgs) :
- 20V
- Input Capacitance (Ciss) (Max) @ Vds :
- 1630pF @ 25V
- Transistor Application :
- SWITCHING
- Avalanche Energy Rating (Eas) :
- 990 mJ
- Published :
- 2013
- Series :
- QFET®
- Fall Time (Typ) :
- 145 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V 10V
- Current - Continuous Drain (Id) @ 25°C :
- 52.4A Tc
- Voltage - Rated DC :
- 60V
- Turn-Off Delay Time :
- 80 ns
- Transistor Element Material :
- SILICON
- JEDEC-95 Code :
- TO-220AB
- Number of Terminations :
- 3
- Resistance :
- 21mOhm
- Number of Pins :
- 3
- Lead Free :
- Lead Free
- Length :
- 10.1mm
- JESD-609 Code :
- e3
- Datasheets
- FQP50N06L

N-Channel Tube 21m Ω @ 26.2A, 10V ±20V 1630pF @ 25V 32nC @ 5V TO-220-3
FQP50N06L Description
FQP50N06L is a type of N-Channel QFET? enhancement-mode power MOSFET provided by ON Semiconductor based on the proprietary, planar stripe, DMOS technology. It is able to provide low on-state resistance, superior switching performance, and high avalanche energy strength. It is ideally suitable for switched-mode power supplies, DC motor control, audio amplifier, and variable switching power applications.
FQP50N06L Features
-
Low gate charge
-
Low on-state resistance
-
Superior switching performance
-
High avalanche energy strength
-
Available in the TO-220 package
FQP50N06L Applications
-
DC motor control
-
Audio amplifier
-
Switched-mode power supplies
-
Variable switching power applications
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