FQP5N40
- Mfr.Part #
- FQP5N40
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 400V 4.5A TO220-3
- Stock
- 14,494
- In Stock :
- 14,494
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Pin Count :
- 3
- Number of Elements :
- 1
- Surface Mount :
- No
- Transistor Element Material :
- SILICON
- Power Dissipation-Max :
- 70W Tc
- Time@Peak Reflow Temperature-Max (s) :
- Not Applicable
- Vgs (Max) :
- ±30V
- Rds On (Max) @ Id, Vgs :
- 1.6 Ω @ 2.25A, 10V
- Reach Compliance Code :
- Unknown
- Qualification Status :
- COMMERCIAL
- Transistor Application :
- SWITCHING
- RoHS Status :
- ROHS3 Compliant
- FET Type :
- N-Channel
- Operating Mode :
- ENHANCEMENT MODE
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- JESD-609 Code :
- e3
- Terminal Position :
- Single
- Packaging :
- Tube
- Input Capacitance (Ciss) (Max) @ Vds :
- 460pF @ 25V
- JEDEC-95 Code :
- TO-220AB
- Drain to Source Voltage (Vdss) :
- 400V
- Avalanche Energy Rating (Eas) :
- 290 mJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- JESD-30 Code :
- R-PSFM-T3
- DS Breakdown Voltage-Min :
- 400V
- Current - Continuous Drain (Id) @ 25°C :
- 4.5A Tc
- Peak Reflow Temperature (Cel) :
- Not Applicable
- Gate Charge (Qg) (Max) @ Vgs :
- 13nC @ 10V
- Series :
- QFET®
- Mounting Type :
- Through Hole
- Pulsed Drain Current-Max (IDM) :
- 18A
- Number of Terminations :
- 3
- Drain Current-Max (Abs) (ID) :
- 4.5A
- Terminal Finish :
- MATTE TIN
- Package / Case :
- TO-220-3
- Operating Temperature :
- -55°C~150°C TJ
- Pbfree Code :
- yes
- Datasheets
- FQP5N40

N-Channel Tube 1.6 Ω @ 2.25A, 10V ±30V 460pF @ 25V 13nC @ 10V 400V TO-220-3
FQP5N40 Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 290 mJ.The maximum input capacitance of this device is 460pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.As shown in the table below, the drain current of this device is 4.5A.There is no pulsed drain current maximum for this device based on its rated peak drain current 18A.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 400V.The drain-to-source voltage (Vdss) of this transistor needs to be at 400V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
FQP5N40 Features
the avalanche energy rating (Eas) is 290 mJ
based on its rated peak drain current 18A.
a 400V drain to source voltage (Vdss)
FQP5N40 Applications
There are a lot of Rochester Electronics, LLC
FQP5N40 applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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