FQP5N50C

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Drain Current-Max (Abs) (ID) :

5A

Number of Terminations :

3

Package / Case :

TO-220-3

Terminal Position :

Single

Gate Charge (Qg) (Max) @ Vgs :

24nC @ 10V

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

1.4 Ω @ 2.5A, 10V

Drain to Source Voltage (Vdss) :

500V

FET Type :

N-Channel

Reach Compliance Code :

Unknown

Configuration :

SINGLE WITH BUILT-IN DIODE

DS Breakdown Voltage-Min :

500V

Power Dissipation-Max :

73W Tc

Vgs (Max) :

±30V

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

MATTE TIN

Pin Count :

3

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

5A Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs(th) (Max) @ Id :

4V @ 250µA

JESD-30 Code :

R-PSFM-T3

Series :

QFET®

Pulsed Drain Current-Max (IDM) :

20A

Pbfree Code :

yes

Input Capacitance (Ciss) (Max) @ Vds :

625pF @ 25V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Temperature :

-55°C~150°C TJ

JEDEC-95 Code :

TO-220AB

Surface Mount :

No

Qualification Status :

COMMERCIAL

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Packaging :

Tube

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Mounting Type :

Through Hole

Avalanche Energy Rating (Eas) :

300 mJ

Operating Mode :

ENHANCEMENT MODE