FQP5N80
- Mfr.Part #
- FQP5N80
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 800V 4.8A TO220-3
- Stock
- 31,628
- In Stock :
- 31,628
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- DS Breakdown Voltage-Min :
- 800V
- Transistor Application :
- SWITCHING
- Pin Count :
- 3
- Package / Case :
- TO-220-3
- Operating Mode :
- ENHANCEMENT MODE
- Reach Compliance Code :
- Unknown
- Rds On (Max) @ Id, Vgs :
- 2.6 Ω @ 2.4A, 10V
- Series :
- QFET®
- JESD-609 Code :
- e3
- Packaging :
- Tube
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Through Hole
- Current - Continuous Drain (Id) @ 25°C :
- 4.8A Tc
- Transistor Element Material :
- SILICON
- Vgs (Max) :
- ±30V
- Terminal Position :
- Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 1.25pF @ 25V
- Peak Reflow Temperature (Cel) :
- Not Applicable
- Operating Temperature :
- -55°C~150°C TJ
- Surface Mount :
- No
- Power Dissipation-Max :
- 140W Tc
- Drain Current-Max (Abs) (ID) :
- 4.8A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-30 Code :
- R-PSFM-T3
- Pbfree Code :
- yes
- Number of Elements :
- 1
- Qualification Status :
- COMMERCIAL
- Pulsed Drain Current-Max (IDM) :
- 19.2A
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Number of Terminations :
- 3
- Avalanche Energy Rating (Eas) :
- 590 mJ
- Gate Charge (Qg) (Max) @ Vgs :
- 33nC @ 10V
- Time@Peak Reflow Temperature-Max (s) :
- Not Applicable
- JEDEC-95 Code :
- TO-220AB
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Drain to Source Voltage (Vdss) :
- 800V
- Terminal Finish :
- MATTE TIN
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- FET Type :
- N-Channel
- Datasheets
- FQP5N80
FQP5N80 Documents

N-Channel Tube 2.6 Ω @ 2.4A, 10V ±30V 1.25pF @ 25V 33nC @ 10V 800V TO-220-3
FQP5N80 Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 590 mJ.The maximum input capacitance of this device is 1.25pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.As shown in the table below, the drain current of this device is 4.8A.There is no pulsed drain current maximum for this device based on its rated peak drain current 19.2A.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 800V.The drain-to-source voltage (Vdss) of this transistor needs to be at 800V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
FQP5N80 Features
the avalanche energy rating (Eas) is 590 mJ
based on its rated peak drain current 19.2A.
a 800V drain to source voltage (Vdss)
FQP5N80 Applications
There are a lot of Rochester Electronics, LLC
FQP5N80 applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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