FQP5N60C

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Rise Time :

42ns

Turn-Off Delay Time :

38 ns

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mounting Type :

Through Hole

Gate Charge (Qg) (Max) @ Vgs :

19nC @ 10V

Voltage - Rated DC :

600V

Gate to Source Voltage (Vgs) :

30V

Drain to Source Breakdown Voltage :

600V

JESD-609 Code :

e3

Published :

2013

Vgs(th) (Max) @ Id :

4V @ 250µA

Rds On (Max) @ Id, Vgs :

2.5 Ω @ 2.25A, 10V

Series :

QFET®

Fall Time (Typ) :

46 ns

Continuous Drain Current (ID) :

4.5A

Input Capacitance (Ciss) (Max) @ Vds :

670pF @ 25V

Transistor Application :

SWITCHING

Packaging :

Tube

Factory Lead Time :

4 Weeks

Vgs (Max) :

±30V

JEDEC-95 Code :

TO-220AB

Operating Mode :

ENHANCEMENT MODE

Height :

9.4mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

4.5A Tc

Pbfree Code :

yes

Resistance :

2.5Ohm

Turn On Delay Time :

10 ns

Weight :

1.8g

Package / Case :

TO-220-3

Mount :

Through Hole

Transistor Element Material :

SILICON

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Power Dissipation :

100W

RoHS Status :

ROHS3 Compliant

Width :

4.7mm

REACH SVHC :

No SVHC

Number of Terminations :

3

Threshold Voltage :

4V

ECCN Code :

EAR99

Number of Pins :

3

FET Type :

N-Channel

Terminal Finish :

Tin (Sn)

Element Configuration :

Single

Current Rating :

4.5A

Power Dissipation-Max :

100W Tc

Length :

10.1mm

Operating Temperature :

-55°C~150°C TJ

Radiation Hardening :

No

Lead Free :

Lead Free