FQI7P06TU

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

3.75W Ta 45W Tc

Rds On (Max) @ Id, Vgs :

410m Ω @ 3.5A, 10V

Vgs(th) (Max) @ Id :

4V @ 250µA

Packaging :

Tube

FET Type :

P-Channel

Drain-source On Resistance-Max :

0.41Ohm

DS Breakdown Voltage-Min :

60V

Surface Mount :

No

Drain Current-Max (Abs) (ID) :

7A

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Reach Compliance Code :

Unknown

Pulsed Drain Current-Max (IDM) :

28A

Number of Terminations :

3

Series :

QFET®

Current - Continuous Drain (Id) @ 25°C :

7A Tc

JESD-30 Code :

R-PSIP-T3

Transistor Application :

SWITCHING

Vgs (Max) :

±25V

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Finish :

MATTE TIN

Mounting Type :

Through Hole

Peak Reflow Temperature (Cel) :

Not Applicable

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

Pbfree Code :

yes

Terminal Position :

Single

Input Capacitance (Ciss) (Max) @ Vds :

295pF @ 25V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~175°C TJ

Qualification Status :

COMMERCIAL

Gate Charge (Qg) (Max) @ Vgs :

8.2nC @ 10V

Pin Count :

3

Drain to Source Voltage (Vdss) :

60V

Operating Mode :

ENHANCEMENT MODE

Avalanche Energy Rating (Eas) :

90 mJ

RoHS Status :

ROHS3 Compliant