FQI7N80TU

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Qualification Status :

Not Qualified

JESD-609 Code :

e3

Avalanche Energy Rating (Eas) :

580 mJ

Element Configuration :

Single

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

1850pF @ 25V

Number of Terminations :

3

Transistor Element Material :

SILICON

Pbfree Code :

yes

Vgs (Max) :

±30V

Current Rating :

6.6A

Lead Free :

Lead Free

Pulsed Drain Current-Max (IDM) :

26.4A

Mount :

Through Hole

Series :

QFET®

Voltage - Rated DC :

800V

Turn On Delay Time :

35 ns

Mounting Type :

Through Hole

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Power Dissipation-Max :

3.13W Ta 167W Tc

Factory Lead Time :

5 Weeks

Transistor Application :

SWITCHING

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

JESD-30 Code :

R-PSIP-T3

Turn-Off Delay Time :

95 ns

Reach Compliance Code :

not_compliant

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Temperature :

-55°C~150°C TJ

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

6.6A

Published :

2013

Drive Voltage (Max Rds On,Min Rds On) :

10V

Packaging :

Tube

Drain to Source Breakdown Voltage :

800V

Gate to Source Voltage (Vgs) :

30V

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Rds On (Max) @ Id, Vgs :

1.5 Ω @ 3.3A, 10V

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Fall Time (Typ) :

55 ns

FET Type :

N-Channel

Weight :

2.084g

Power Dissipation :

3.13W

Gate Charge (Qg) (Max) @ Vgs :

52nC @ 10V

Terminal Finish :

Tin (Sn)

Vgs(th) (Max) @ Id :

5V @ 250μA

Rise Time :

80ns

Current - Continuous Drain (Id) @ 25°C :

6.6A Tc