FQI7N10LTU

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

350m Ω @ 3.65A, 10V

Operating Temperature :

-55°C~175°C TJ

Drain to Source Voltage (Vdss) :

100V

Avalanche Energy Rating (Eas) :

50 mJ

Current - Continuous Drain (Id) @ 25°C :

7.3A Tc

Pbfree Code :

yes

Vgs (Max) :

±20V

FET Type :

N-Channel

Transistor Element Material :

SILICON

Number of Terminations :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Reach Compliance Code :

Unknown

Series :

QFET®

Terminal Position :

Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

2V @ 250μA

Qualification Status :

COMMERCIAL

Number of Elements :

1

Pulsed Drain Current-Max (IDM) :

29.2A

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Mounting Type :

Through Hole

Drain Current-Max (Abs) (ID) :

7.3A

RoHS Status :

ROHS3 Compliant

JESD-30 Code :

R-PSIP-T3

Terminal Finish :

NOT SPECIFIED

Input Capacitance (Ciss) (Max) @ Vds :

290pF @ 25V

Surface Mount :

No

Transistor Application :

SWITCHING

Drain-source On Resistance-Max :

0.38Ohm

DS Breakdown Voltage-Min :

100V

Packaging :

Tube

Gate Charge (Qg) (Max) @ Vgs :

6nC @ 5V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Configuration :

SINGLE WITH BUILT-IN DIODE

Pin Count :

3

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Power Dissipation-Max :

3.75W Ta 40W Tc