FQI7N60TU

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Finish :

Tin (Sn)

Operating Temperature :

-55°C~150°C TJ

Weight :

2.084g

Rds On (Max) @ Id, Vgs :

1 Ω @ 3.7A, 10V

Mount :

Through Hole

Transistor Application :

SWITCHING

Pbfree Code :

yes

Number of Terminations :

3

Turn-Off Delay Time :

65 ns

Current Rating :

7.4A

Vgs(th) (Max) @ Id :

5V @ 250μA

Reach Compliance Code :

not_compliant

Drain-source On Resistance-Max :

1Ohm

Drain to Source Breakdown Voltage :

600V

Mounting Type :

Through Hole

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

5 Weeks

Published :

2014

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drive Voltage (Max Rds On,Min Rds On) :

10V

Avalanche Energy Rating (Eas) :

580 mJ

RoHS Status :

ROHS3 Compliant

JESD-30 Code :

R-PSIP-T3

Packaging :

Tube

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

1430pF @ 25V

Gate to Source Voltage (Vgs) :

30V

JESD-609 Code :

e3

Vgs (Max) :

±30V

Turn On Delay Time :

30 ns

Transistor Element Material :

SILICON

Element Configuration :

Single

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Voltage - Rated DC :

600V

Series :

QFET®

Lead Free :

Lead Free

Pulsed Drain Current-Max (IDM) :

29.6A

FET Type :

N-Channel

Power Dissipation :

3.13W

Qualification Status :

Not Qualified

Rise Time :

80ns

Power Dissipation-Max :

3.13W Ta 142W Tc

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Fall Time (Typ) :

60 ns

Operating Mode :

ENHANCEMENT MODE

Continuous Drain Current (ID) :

7.4A

Current - Continuous Drain (Id) @ 25°C :

7.4A Tc

Gate Charge (Qg) (Max) @ Vgs :

38nC @ 10V

Number of Elements :

1