FQI7N10LTU

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

3

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Pulsed Drain Current-Max (IDM) :

29.2A

RoHS Status :

ROHS3 Compliant

Vgs (Max) :

±20V

Pin Count :

3

Qualification Status :

COMMERCIAL

Drain-source On Resistance-Max :

0.38Ohm

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

Surface Mount :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Single

Packaging :

Tube

Pbfree Code :

yes

Mounting Type :

Through Hole

Drain Current-Max (Abs) (ID) :

7.3A

Current - Continuous Drain (Id) @ 25°C :

7.3A Tc

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain to Source Voltage (Vdss) :

100V

Avalanche Energy Rating (Eas) :

50 mJ

Transistor Element Material :

SILICON

Power Dissipation-Max :

3.75W Ta 40W Tc

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

350m Ω @ 3.65A, 10V

JESD-30 Code :

R-PSIP-T3

Reach Compliance Code :

Unknown

Vgs(th) (Max) @ Id :

2V @ 250μA

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Finish :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

6nC @ 5V

Series :

QFET®

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Input Capacitance (Ciss) (Max) @ Vds :

290pF @ 25V

Transistor Application :

SWITCHING

DS Breakdown Voltage-Min :

100V

Operating Temperature :

-55°C~175°C TJ