FQI7P06TU
- Mfr.Part #
- FQI7P06TU
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Datasheet
- Download
- Description
- MOSFET P-CH 60V 7A I2PAK
- Stock
- 2,199
- In Stock :
- 2,199
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Elements :
- 1
- JESD-30 Code :
- R-PSIP-T3
- Operating Temperature :
- -55°C~175°C TJ
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Reach Compliance Code :
- Unknown
- Packaging :
- Tube
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Vgs (Max) :
- ±25V
- Transistor Application :
- SWITCHING
- Number of Terminations :
- 3
- FET Type :
- P-Channel
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain-source On Resistance-Max :
- 0.41Ohm
- Power Dissipation-Max :
- 3.75W Ta 45W Tc
- Series :
- QFET®
- Current - Continuous Drain (Id) @ 25°C :
- 7A Tc
- Avalanche Energy Rating (Eas) :
- 90 mJ
- Mounting Type :
- Through Hole
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Drain Current-Max (Abs) (ID) :
- 7A
- RoHS Status :
- ROHS3 Compliant
- Qualification Status :
- COMMERCIAL
- Operating Mode :
- ENHANCEMENT MODE
- Pbfree Code :
- yes
- Rds On (Max) @ Id, Vgs :
- 410m Ω @ 3.5A, 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 295pF @ 25V
- Surface Mount :
- No
- DS Breakdown Voltage-Min :
- 60V
- Pin Count :
- 3
- Gate Charge (Qg) (Max) @ Vgs :
- 8.2nC @ 10V
- Drain to Source Voltage (Vdss) :
- 60V
- Pulsed Drain Current-Max (IDM) :
- 28A
- JESD-609 Code :
- e3
- Package / Case :
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Time@Peak Reflow Temperature-Max (s) :
- Not Applicable
- Terminal Position :
- Single
- Peak Reflow Temperature (Cel) :
- Not Applicable
- Terminal Finish :
- MATTE TIN
- Transistor Element Material :
- SILICON
- Datasheets
- FQI7P06TU

P-Channel Tube 410m Ω @ 3.5A, 10V ±25V 295pF @ 25V 8.2nC @ 10V 60V TO-262-3 Long Leads, I2Pak, TO-262AA
FQI7P06TU Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 90 mJ.A device's maximal input capacitance is 295pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.In this device, the drain current is 7A, which is the maximum continuous current the device can conduct.In terms of pulsed drain current, it has a maximum of 28A, which is its maximum rated peak drain current.To maintain normal operation, it is recommended that the DS breakdown voltage be above 60V.This transistor requires a 60V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
FQI7P06TU Features
the avalanche energy rating (Eas) is 90 mJ
based on its rated peak drain current 28A.
a 60V drain to source voltage (Vdss)
FQI7P06TU Applications
There are a lot of Rochester Electronics, LLC
FQI7P06TU applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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