FQI7P06TU

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Voltage (Vdss) :

60V

Terminal Finish :

MATTE TIN

Operating Temperature :

-55°C~175°C TJ

Pulsed Drain Current-Max (IDM) :

28A

Pbfree Code :

yes

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Reach Compliance Code :

Unknown

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs(th) (Max) @ Id :

4V @ 250µA

Number of Elements :

1

Avalanche Energy Rating (Eas) :

90 mJ

JESD-609 Code :

e3

Series :

QFET®

Surface Mount :

No

Vgs (Max) :

±25V

Drive Voltage (Max Rds On,Min Rds On) :

10V

FET Type :

P-Channel

Peak Reflow Temperature (Cel) :

Not Applicable

Drain Current-Max (Abs) (ID) :

7A

Operating Mode :

ENHANCEMENT MODE

Terminal Position :

Single

JESD-30 Code :

R-PSIP-T3

Mounting Type :

Through Hole

Rds On (Max) @ Id, Vgs :

410m Ω @ 3.5A, 10V

Pin Count :

3

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Power Dissipation-Max :

3.75W Ta 45W Tc

Packaging :

Tube

Drain-source On Resistance-Max :

0.41Ohm

Current - Continuous Drain (Id) @ 25°C :

7A Tc

Gate Charge (Qg) (Max) @ Vgs :

8.2nC @ 10V

Number of Terminations :

3

Qualification Status :

COMMERCIAL

Input Capacitance (Ciss) (Max) @ Vds :

295pF @ 25V

Transistor Element Material :

SILICON

DS Breakdown Voltage-Min :

60V

Time@Peak Reflow Temperature-Max (s) :

Not Applicable