FQI7N10TU

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

QFET®

Power Dissipation-Max :

3.75W Ta 40W Tc

Vgs (Max) :

±25V

Packaging :

Tube

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

7.5nC @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs(th) (Max) @ Id :

4V @ 250µA

Published :

2000

Drain to Source Voltage (Vdss) :

100V

Rds On (Max) @ Id, Vgs :

350mOhm @ 3.65A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

250pF @ 25V

Mounting Type :

Through Hole

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~175°C TJ

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Supplier Device Package :

I2PAK (TO-262)

Current - Continuous Drain (Id) @ 25°C :

7.3A Tc