FQI5P10TU

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Position :

Single

Pulsed Drain Current-Max (IDM) :

18A

Number of Terminations :

3

Terminal Finish :

MATTE TIN

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

250pF @ 25V

Rds On (Max) @ Id, Vgs :

1.05 Ω @ 2.25A, 10V

Current - Continuous Drain (Id) @ 25°C :

4.5A Tc

Vgs(th) (Max) @ Id :

4V @ 250µA

Transistor Element Material :

SILICON

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Surface Mount :

No

Power Dissipation-Max :

3.75W Ta 40W Tc

Pin Count :

3

FET Type :

P-Channel

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

Peak Reflow Temperature (Cel) :

Not Applicable

RoHS Status :

ROHS3 Compliant

Reach Compliance Code :

Unknown

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Elements :

1

Mounting Type :

Through Hole

Pbfree Code :

yes

Drain Current-Max (Abs) (ID) :

4.5A

Drain to Source Voltage (Vdss) :

100V

Vgs (Max) :

±30V

JESD-609 Code :

e3

JESD-30 Code :

R-PSIP-T3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

QFET®

Operating Temperature :

-55°C~175°C TJ

DS Breakdown Voltage-Min :

100V

Packaging :

Tube

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

8.2nC @ 10V

Avalanche Energy Rating (Eas) :

55 mJ

Qualification Status :

COMMERCIAL