FQI50N06LTU

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Rds On (Max) @ Id, Vgs :

21m Ω @ 26.2A, 10V

Drain Current-Max (Abs) (ID) :

52.4A

Current - Continuous Drain (Id) @ 25°C :

52.4A Tc

Surface Mount :

No

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs (Max) :

±20V

Terminal Position :

Single

Avalanche Energy Rating (Eas) :

990 mJ

Pin Count :

3

Power Dissipation-Max :

3.75W Ta 121W Tc

Pulsed Drain Current-Max (IDM) :

210A

Qualification Status :

COMMERCIAL

RoHS Status :

ROHS3 Compliant

Drain to Source Voltage (Vdss) :

60V

FET Type :

N-Channel

Pbfree Code :

yes

Operating Temperature :

-55°C~175°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

1.63pF @ 25V

Mounting Type :

Through Hole

Drain-source On Resistance-Max :

0.025Ohm

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tube

Number of Terminations :

3

Terminal Finish :

NOT SPECIFIED

Number of Elements :

1

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

32nC @ 5V

Transistor Application :

SWITCHING

Series :

QFET®

Reach Compliance Code :

Unknown

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Transistor Element Material :

SILICON

JESD-30 Code :

R-PSIP-T3

DS Breakdown Voltage-Min :

60V