FQI5N60CTU

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Turn-Off Delay Time :

38 ns

Pbfree Code :

yes

Turn On Delay Time :

10 ns

Current Rating :

5A

Vgs(th) (Max) @ Id :

4V @ 250µA

Additional Feature :

FAST SWITCHING

Terminal Finish :

Tin (Sn)

Packaging :

Tube

Fall Time (Typ) :

46 ns

Mounting Type :

Through Hole

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

FET Type :

N-Channel

Published :

2013

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

4 Weeks

Vgs (Max) :

±30V

Radiation Hardening :

No

Number of Terminations :

3

Series :

QFET®

Drain to Source Breakdown Voltage :

600V

Current - Continuous Drain (Id) @ 25°C :

4.5A Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Lead Free :

Lead Free

Weight :

2.084g

Power Dissipation :

3.13W

Operating Mode :

ENHANCEMENT MODE

JESD-30 Code :

R-PSIP-T3

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

JESD-609 Code :

e3

ECCN Code :

EAR99

Continuous Drain Current (ID) :

4.5A

Element Configuration :

Single

Lifecycle Status :

ACTIVE (Last Updated: 2 weeks ago)

Mount :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

670pF @ 25V

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

2.5 Ω @ 2.25A, 10V

Power Dissipation-Max :

3.13W Ta 100W Tc

Rise Time :

42ns

Operating Temperature :

-55°C~150°C TJ

Voltage - Rated DC :

600V

Gate Charge (Qg) (Max) @ Vgs :

19nC @ 10V

Gate to Source Voltage (Vgs) :

30V

RoHS Status :

ROHS3 Compliant