FQI5N20TU

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

7.5nC @ 10V

Power Dissipation-Max :

3.13W Ta 52W Tc

Operating Temperature :

-55°C~150°C TJ

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain to Source Voltage (Vdss) :

200V

Reach Compliance Code :

Unknown

Current - Continuous Drain (Id) @ 25°C :

4.5A Tc

Pbfree Code :

yes

Input Capacitance (Ciss) (Max) @ Vds :

270pF @ 25V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Position :

Single

Terminal Finish :

NOT SPECIFIED

DS Breakdown Voltage-Min :

200V

Operating Mode :

ENHANCEMENT MODE

Drain Current-Max (Abs) (ID) :

4.5A

RoHS Status :

ROHS3 Compliant

Series :

QFET®

Transistor Application :

SWITCHING

JESD-30 Code :

R-PSIP-T3

Pin Count :

3

Surface Mount :

No

Transistor Element Material :

SILICON

Vgs (Max) :

±30V

Mounting Type :

Through Hole

Packaging :

Tube

Number of Terminations :

3

Qualification Status :

COMMERCIAL

Avalanche Energy Rating (Eas) :

60 mJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

5V @ 250μA

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

1.2 Ω @ 2.25A, 10V

Pulsed Drain Current-Max (IDM) :

18A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

FET Type :

N-Channel

Configuration :

SINGLE WITH BUILT-IN DIODE