FQI5N50CTU

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Reach Compliance Code :

Unknown

Configuration :

SINGLE WITH BUILT-IN DIODE

RoHS Status :

ROHS3 Compliant

Terminal Finish :

MATTE TIN

Terminal Position :

Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

Vgs (Max) :

±30V

Transistor Element Material :

SILICON

Drain to Source Voltage (Vdss) :

500V

JESD-30 Code :

R-PSFM-T3

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

24nC @ 10V

Qualification Status :

COMMERCIAL

Power Dissipation-Max :

73W Tc

Transistor Application :

SWITCHING

Number of Terminations :

3

Rds On (Max) @ Id, Vgs :

1.4 Ω @ 2.5A, 10V

Series :

QFET®

FET Type :

N-Channel

Operating Temperature :

-55°C~150°C TJ

Pbfree Code :

yes

Surface Mount :

No

Mounting Type :

Through Hole

Pin Count :

3

Peak Reflow Temperature (Cel) :

Not Applicable

JESD-609 Code :

e3

Vgs(th) (Max) @ Id :

4V @ 250µA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DS Breakdown Voltage-Min :

500V

Drain Current-Max (Abs) (ID) :

5A

Avalanche Energy Rating (Eas) :

300 mJ

Current - Continuous Drain (Id) @ 25°C :

5A Tc

Input Capacitance (Ciss) (Max) @ Vds :

625pF @ 25V

Packaging :

Tube

Pulsed Drain Current-Max (IDM) :

20A