FQI5N50CTU

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

5A Tc

JESD-609 Code :

e3

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

Qualification Status :

COMMERCIAL

Mounting Type :

Through Hole

Operating Mode :

ENHANCEMENT MODE

Pin Count :

3

RoHS Status :

ROHS3 Compliant

Number of Terminations :

3

Pbfree Code :

yes

Operating Temperature :

-55°C~150°C TJ

Drain Current-Max (Abs) (ID) :

5A

Vgs (Max) :

±30V

Series :

QFET®

Peak Reflow Temperature (Cel) :

Not Applicable

Vgs(th) (Max) @ Id :

4V @ 250µA

Rds On (Max) @ Id, Vgs :

1.4 Ω @ 2.5A, 10V

Surface Mount :

No

Configuration :

SINGLE WITH BUILT-IN DIODE

Drive Voltage (Max Rds On,Min Rds On) :

10V

Reach Compliance Code :

Unknown

Pulsed Drain Current-Max (IDM) :

20A

Drain to Source Voltage (Vdss) :

500V

DS Breakdown Voltage-Min :

500V

Gate Charge (Qg) (Max) @ Vgs :

24nC @ 10V

Packaging :

Tube

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Single

FET Type :

N-Channel

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

JESD-30 Code :

R-PSFM-T3

Terminal Finish :

MATTE TIN

Avalanche Energy Rating (Eas) :

300 mJ

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

625pF @ 25V

Power Dissipation-Max :

73W Tc