FQI5N60CTU

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Application :

SWITCHING

Rise Time :

42ns

Published :

2013

Drain to Source Breakdown Voltage :

600V

RoHS Status :

ROHS3 Compliant

Voltage - Rated DC :

600V

Turn On Delay Time :

10 ns

Vgs(th) (Max) @ Id :

4V @ 250µA

Transistor Element Material :

SILICON

Series :

QFET®

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lead Free :

Lead Free

Mounting Type :

Through Hole

Turn-Off Delay Time :

38 ns

ECCN Code :

EAR99

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Lifecycle Status :

ACTIVE (Last Updated: 2 weeks ago)

Rds On (Max) @ Id, Vgs :

2.5 Ω @ 2.25A, 10V

FET Type :

N-Channel

Weight :

2.084g

JESD-30 Code :

R-PSIP-T3

Gate Charge (Qg) (Max) @ Vgs :

19nC @ 10V

Fall Time (Typ) :

46 ns

Input Capacitance (Ciss) (Max) @ Vds :

670pF @ 25V

Power Dissipation-Max :

3.13W Ta 100W Tc

Packaging :

Tube

Mount :

Through Hole

Drive Voltage (Max Rds On,Min Rds On) :

10V

Radiation Hardening :

No

JESD-609 Code :

e3

Current - Continuous Drain (Id) @ 25°C :

4.5A Tc

Factory Lead Time :

4 Weeks

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

3

Vgs (Max) :

±30V

Continuous Drain Current (ID) :

4.5A

Power Dissipation :

3.13W

Gate to Source Voltage (Vgs) :

30V

Current Rating :

5A

Terminal Finish :

Tin (Sn)

Operating Temperature :

-55°C~150°C TJ

Number of Elements :

1

Additional Feature :

FAST SWITCHING

Element Configuration :

Single

Pbfree Code :

yes