FQI50N06TU

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

3.75W Ta 120W Tc

RoHS Status :

ROHS3 Compliant

Terminal Finish :

Tin (Sn)

Pbfree Code :

yes

Current - Continuous Drain (Id) @ 25°C :

50A Tc

Rise Time :

105ns

Operating Mode :

ENHANCEMENT MODE

Avalanche Energy Rating (Eas) :

490 mJ

Mount :

Through Hole

Power Dissipation :

3.75W

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mounting Type :

Through Hole

Gate Charge (Qg) (Max) @ Vgs :

41nC @ 10V

Drain-source On Resistance-Max :

0.022Ohm

Continuous Drain Current (ID) :

50A

Turn On Delay Time :

15 ns

Series :

QFET®

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Radiation Hardening :

No

Lead Free :

Lead Free

Current Rating :

50A

Transistor Application :

SWITCHING

Factory Lead Time :

6 Weeks

Input Capacitance (Ciss) (Max) @ Vds :

1540pF @ 25V

Weight :

2.084g

Operating Temperature :

-55°C~175°C TJ

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Rds On (Max) @ Id, Vgs :

22m Ω @ 25A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-30 Code :

R-PSIP-T3

Turn-Off Delay Time :

60 ns

Fall Time (Typ) :

65 ns

Voltage - Rated DC :

60V

Number of Elements :

1

Gate to Source Voltage (Vgs) :

25V

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

4V @ 250µA

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Drain to Source Breakdown Voltage :

60V

Packaging :

Tube

Vgs (Max) :

±25V

Element Configuration :

Single

Number of Terminations :

3

Pulsed Drain Current-Max (IDM) :

200A

ECCN Code :

EAR99