FQI50N06TU

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Temperature :

-55°C~175°C TJ

Gate Charge (Qg) (Max) @ Vgs :

41nC @ 10V

Series :

QFET®

Drain to Source Breakdown Voltage :

60V

Power Dissipation :

3.75W

Factory Lead Time :

6 Weeks

Transistor Application :

SWITCHING

Mount :

Through Hole

Avalanche Energy Rating (Eas) :

490 mJ

Transistor Element Material :

SILICON

Current Rating :

50A

Mounting Type :

Through Hole

Lead Free :

Lead Free

Pbfree Code :

yes

Number of Terminations :

3

Continuous Drain Current (ID) :

50A

Rise Time :

105ns

Drain-source On Resistance-Max :

0.022Ohm

Input Capacitance (Ciss) (Max) @ Vds :

1540pF @ 25V

Turn On Delay Time :

15 ns

Gate to Source Voltage (Vgs) :

25V

Power Dissipation-Max :

3.75W Ta 120W Tc

Turn-Off Delay Time :

60 ns

Weight :

2.084g

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

22m Ω @ 25A, 10V

Number of Elements :

1

Packaging :

Tube

Element Configuration :

Single

FET Type :

N-Channel

RoHS Status :

ROHS3 Compliant

Current - Continuous Drain (Id) @ 25°C :

50A Tc

Pulsed Drain Current-Max (IDM) :

200A

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99

JESD-30 Code :

R-PSIP-T3

Terminal Finish :

Tin (Sn)

Fall Time (Typ) :

65 ns

JESD-609 Code :

e3

Vgs (Max) :

±25V

Vgs(th) (Max) @ Id :

4V @ 250µA

Voltage - Rated DC :

60V