FQI5N30TU

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Pulsed Drain Current-Max (IDM) :

21.6A

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Qualification Status :

COMMERCIAL

Input Capacitance (Ciss) (Max) @ Vds :

430pF @ 25V

FET Type :

N-Channel

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

13nC @ 10V

Power Dissipation-Max :

3.13W Ta 70W Tc

Current - Continuous Drain (Id) @ 25°C :

5.4A Tc

Mounting Type :

Through Hole

Drain Current-Max (Abs) (ID) :

5.4A

Packaging :

Tube

Peak Reflow Temperature (Cel) :

Not Applicable

Number of Terminations :

3

Rds On (Max) @ Id, Vgs :

900m Ω @ 2.7A, 10V

Avalanche Energy Rating (Eas) :

340 mJ

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pbfree Code :

yes

JESD-609 Code :

e3

Number of Elements :

1

Terminal Finish :

MATTE TIN

Series :

QFET®

Reach Compliance Code :

Unknown

JESD-30 Code :

R-PSIP-T3

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

Drain to Source Voltage (Vdss) :

300V

RoHS Status :

ROHS3 Compliant

Pin Count :

3

Terminal Position :

Single

Configuration :

SINGLE WITH BUILT-IN DIODE

Surface Mount :

No

Drain-source On Resistance-Max :

0.9Ohm

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

5V @ 250μA

Vgs (Max) :

±30V

DS Breakdown Voltage-Min :

300V