FQI5N80TU

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Pbfree Code :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

4.8A Tc

Vgs (Max) :

±30V

Packaging :

Tube

Vgs(th) (Max) @ Id :

5V @ 250μA

RoHS Status :

ROHS3 Compliant

Qualification Status :

COMMERCIAL

Number of Terminations :

3

Transistor Element Material :

SILICON

DS Breakdown Voltage-Min :

800V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Pulsed Drain Current-Max (IDM) :

19.2A

Pin Count :

3

Power Dissipation-Max :

3.13W Ta 140W Tc

Mounting Type :

Through Hole

Configuration :

SINGLE WITH BUILT-IN DIODE

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Reach Compliance Code :

Unknown

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate Charge (Qg) (Max) @ Vgs :

33nC @ 10V

Terminal Position :

Single

Input Capacitance (Ciss) (Max) @ Vds :

1.25pF @ 25V

Rds On (Max) @ Id, Vgs :

2.6 Ω @ 2.4A, 10V

Transistor Application :

SWITCHING

Drain to Source Voltage (Vdss) :

800V

Operating Temperature :

-55°C~150°C TJ

Terminal Finish :

NOT SPECIFIED

Series :

QFET®

Surface Mount :

No

JESD-30 Code :

R-PSIP-T3

Number of Elements :

1

Avalanche Energy Rating (Eas) :

590 mJ

Drain Current-Max (Abs) (ID) :

4.8A