FQI4P40TU

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate Charge (Qg) (Max) @ Vgs :

23nC @ 10V

Packaging :

Tube

Power Dissipation-Max :

3.13W Ta 85W Tc

RoHS Status :

ROHS3 Compliant

Series :

QFET®

Drain to Source Voltage (Vdss) :

400V

Input Capacitance (Ciss) (Max) @ Vds :

680pF @ 25V

Transistor Application :

SWITCHING

Terminal Finish :

MATTE TIN

Qualification Status :

COMMERCIAL

Configuration :

SINGLE WITH BUILT-IN DIODE

Avalanche Energy Rating (Eas) :

260 mJ

Reach Compliance Code :

Unknown

Operating Temperature :

-55°C~150°C TJ

Rds On (Max) @ Id, Vgs :

3.1 Ω @ 1.75A, 10V

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

DS Breakdown Voltage-Min :

400V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Surface Mount :

No

Current - Continuous Drain (Id) @ 25°C :

3.5A Tc

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

Terminal Position :

Single

Peak Reflow Temperature (Cel) :

Not Applicable

Pin Count :

3

Number of Elements :

1

FET Type :

P-Channel

Pbfree Code :

yes

Drain Current-Max (Abs) (ID) :

3.5A

JESD-30 Code :

R-PSIP-T3

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Through Hole

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

5V @ 250μA

Pulsed Drain Current-Max (IDM) :

14A

Number of Terminations :

3

Vgs (Max) :

±30V

JESD-609 Code :

e3