FQI4N90TU
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- Mfr.Part #
- FQI4N90TU
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Datasheet
- Download
- Description
- POWER FIELD-EFFECT TRANSISTOR, 4
- Stock
- 8,494
- In Stock ：
- 8,494
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- FET Type :
- N-Channel
- Vgs (Max) :
- ±30V
- Rds On (Max) @ Id, Vgs :
- 3.3 Ω @ 2.1A, 10V
- Series :
- QFET®
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Pbfree Code :
- yes
- JESD-609 Code :
- e3
- Current - Continuous Drain (Id) @ 25°C :
- 4.2A Tc
- RoHS Status :
- ROHS3 Compliant
- Packaging :
- Tube
- Gate to Source Voltage (Vgs) :
- 30V
- Lead Free :
- Lead Free
- Turn On Delay Time :
- 25 ns
- Weight :
- 2.084g
- Power Dissipation :
- 3.13W
- Radiation Hardening :
- No
- Input Capacitance (Ciss) (Max) @ Vds :
- 1100pF @ 25V
- JESD-30 Code :
- R-PSIP-T3
- Mounting Type :
- Through Hole
- Transistor Element Material :
- SILICON
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Drain to Source Breakdown Voltage :
- 900V
- Number of Elements :
- 1
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Element Configuration :
- Single
- Resistance :
- 3.3Ohm
- Power Dissipation-Max :
- 3.13W Ta 140W Tc
- Turn-Off Delay Time :
- 45 ns
- Transistor Application :
- SWITCHING
- Operating Mode :
- ENHANCEMENT MODE
- Avalanche Energy Rating (Eas) :
- 570 mJ
- ECCN Code :
- EAR99
- Mount :
- Through Hole
- Gate Charge (Qg) (Max) @ Vgs :
- 30nC @ 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- -55°C~150°C TJ
- Fall Time (Typ) :
- 40 ns
- Package / Case :
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Terminal Finish :
- Tin (Sn)
- Current Rating :
- 4.1A
- Voltage - Rated DC :
- 900V
- Continuous Drain Current (ID) :
- 4.2A
- Rise Time :
- 70ns
- Factory Lead Time :
- 4 Weeks
- Number of Terminations :
- 3
- Datasheets
- FQI4N90TU
N-Channel Tube 3.3 Ω @ 2.1A, 10V ±30V 1100pF @ 25V 30nC @ 10V TO-262-3 Long Leads, I2Pak, TO-262AA
FQI4N90TU Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 570 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1100pF @ 25V.This device conducts a continuous drain current (ID) of 4.2A, which is the maximum continuous current transistor can conduct.Using VGS=900V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 900V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 45 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 25 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 30V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
FQI4N90TU Features
the avalanche energy rating (Eas) is 570 mJ
a continuous drain current (ID) of 4.2A
a drain-to-source breakdown voltage of 900V voltage
the turn-off delay time is 45 ns
FQI4N90TU Applications
There are a lot of ON Semiconductor
FQI4N90TU applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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