FQI47P06TU

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Avalanche Energy Rating (Eas) :

820 mJ

DS Breakdown Voltage-Min :

60V

Pulsed Drain Current-Max (IDM) :

188A

Series :

QFET®

Terminal Finish :

MATTE TIN

Input Capacitance (Ciss) (Max) @ Vds :

3.6pF @ 25V

Drain-source On Resistance-Max :

0.026ohm

Rds On (Max) @ Id, Vgs :

26m Ω @ 23.5A, 10V

Operating Temperature :

-55°C~175°C TJ

Reach Compliance Code :

Unknown

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

Number of Terminations :

3

Transistor Element Material :

SILICON

Vgs (Max) :

±25V

Qualification Status :

COMMERCIAL

Configuration :

SINGLE WITH BUILT-IN DIODE

Peak Reflow Temperature (Cel) :

Not Applicable

FET Type :

P-Channel

Mounting Type :

Through Hole

Current - Continuous Drain (Id) @ 25°C :

47A Tc

Terminal Position :

Single

Drain Current-Max (Abs) (ID) :

47A

JESD-30 Code :

R-PSIP-T3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

4V @ 250µA

JESD-609 Code :

e3

Surface Mount :

No

Power Dissipation-Max :

3.75W Ta 160W Tc

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Pin Count :

3

Transistor Application :

SWITCHING

Pbfree Code :

yes

Packaging :

Tube

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Mode :

ENHANCEMENT MODE

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Drain to Source Voltage (Vdss) :

60V